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參數(shù)資料
| 型號(hào)： | 2SK3573-S |
| 元件分類： | JFETs |
| 英文描述： | 83 A, 20 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262 |
| 封裝： | FIN CUT, MP-25, 3 PIN |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大?。?/td> | 77K |
| 代理商： | 2SK3573-S |
Data Sheet D16259EJ2V0DS
6
2SK3573
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
2) TO-262 (MP-25 Fin Cut)
4.8 MAX.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1 2 3
10.6 MAX.
10.0 TYP.
3.6±0.2
4
3.0±0.3
1.3±0.2
0.75±0.1
2.54 TYP.
5.9
MIN.
6.0
MAX.
15.5
MAX.
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
φ
4.8 MAX.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1
2
3
10 TYP.
1.3±0.2
0.75±0.3
2.54 TYP.
8.5±
0.2
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
1.0±0
.5
4
3) TO-263 (MP-25ZK)
4) TO-220SMD (MP-25Z)
Note
10.0±0.2
8.0
TYP.
2.54
0.7±0.15
9.15±0.2
2.45±0.25
15.25±0.5
1.35±0.3
123
4
2.5
4.45±0.2
1.3±0.2
0.5±0.2
0 to 8o
1. Gate
2. Drain
3. Source
4. Fin (Drain)
0.4
No plating
8.4 TYP.
0.025 to
0.25
10 TYP.
1.4±0.2
1.0±0.5
2.54 TYP.
8.5±0.2
123
3.0±0.5
1.1±0.4
4
4.8 MAX.
1.3±0.2
0.5±0.2
0.5R
TYP.
0.8R
TYP.
0.75±0.3
2.8±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Note This package is produced only in Japan.
EQUIVALENT CIRCUIT
Source (S)
Body
Diode
Gate (G)
Drain (D)
Remark Strong electric field, when exposed to this device, can cause
destruction of the gate oxide and ultimately degrade the device
operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has
occurred.
5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3576-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3576-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 20V 4A 3-Pin Thin-Type Mini-Mold T/R |
| 2SK3576-T1B-AT | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3577-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 3.5A 3-Pin SC-59 |
| 2SK358 | 制造商:Toshiba 功能描述:Bulk |
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