
Application
VHF amplifier
Features
Capable of high density mount
High gain, low noise
Capable of IF amplifier
Table 1 Ordering Information
Tyoe No.
Package
––––––––––––––––––––––––––––––––––––––––
2SK359
TO-92
––––––––––––––––––––––––––––––––––––––––
2SK360
MPAK
––––––––––––––––––––––––––––––––––––––––
2SK439
SPAK
––––––––––––––––––––––––––––––––––––––––
Table 2 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
VDSX*
20
V
———————————————————————————————————————————
Gate to source voltage
VGSS
±5
V
———————————————————————————————————————————
Drain current
ID
30
mA
———————————————————————————————————————————
Gate current
IG
±1
mA
———————————————————————————————————————————
Channel dissipation
2SK359
Pch
400
mW
———————
————————
2SK360
150
———————
————————
2SK439
300
———————————————————————————————————————————
Channel temperature
Tch
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
*: VGS = –4 V
Table 3 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
———————————————————————————————————————————
Drain to source breakdown
V(BR)DSX 20
——V
ID = 100 A, VGS = –4 V
voltage
———————————————————————————————————————————
Gate leakage current
IGSS
—
±20
nA
VGS = ±5 V, VDS = 0
———————————————————————————————————————————
Drain current
IDSS
4
—
12
mA
VDS = 10 V, VGS = 0
———————————————————————————————————————————
Gate to source cutoff voltage
VGS(off)
0
—
–2.0
V
VDS = 10 V, ID = 10 A
———————————————————————————————————————————
Forward transfer admittance
|yfs|8
14
—
mS
VDS = 10 V, VGS = 0,
f = 1 kHz
———————————————————————————————————————————
2SK360 Series
Silicon N-Channel MOS FET
1