參數(shù)資料
型號(hào): 2SK3617
廠商: SANYO SEMICONDUCTOR CO LTD
元件分類: 小信號(hào)晶體管
英文描述: 6000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: TP, 3 PIN
文件頁數(shù): 3/4頁
文件大?。?/td> 58K
代理商: 2SK3617
2SK3617
No.8112-3/4
02468
10
12
280
320
340
240
200
400
360
380
160
300
180
260
220
140
14
16
18
20
RDS(on) -- VGS
IT08292
RDS(on) -- Tc
IT08293
--60
80
140
200
340
400
280
120
180
320
380
260
100
160
300
360
240
220
420
--40
--20
0
20
40
60
80
100
120
140
160
Tc=25
°C
ID=3A
I D
=3A,
V GS
=4V
I D
=3A,
V GS
=10V
0
1
2
3
4
5
6
7
8
14
810
12
26
4
9
10
VGS -- Qg
IT08295
A S O
5
2
3
5
7
2
3
5
7
2
3
2
3
5
7
10
1.0
0.1
0.01
23
5 7
23
5 7
23
5 7
2
0.1
1.0
10
100
IT08296
0
10
100
510
1000
7
5
3
2
7
5
3
2
30
15
20
25
Ciss, Coss, Crss -- VDS
IT08294
0.1
1.0
23
5
7
23
5
7
100
2
10
7
5
3
2
7
5
3
2
SW Time -- ID
IT04724
IT04722
0.01
0.1
1.0
23
5
7
23
5
7
23
5
7
10
1.0
7
5
3
2
7
5
3
2
10
yfs -- ID
IT04723
0.2
0.6
0.4
0.8
1.0
1.2
0.01
0.1
10
1.0
7
5
3
2
7
5
3
2
7
5
3
2
IF -- VSD
VDS=10V
75°
C
25°
C
Tc=
--25
°C
VGS=0
--25
°C
25
°C
T
c=75
°C
f=1MHz
Ciss
Coss
Crss
VDS=50V
ID=6A
VDD=50V
VGS=10V
td(on)
td(off)
tr
tf
100ms
DC
operation
(T
c=25
°C)
10ms
IDP=24A
10
s
100
s
Operation in this
area is limited by RDS(on).
ID=6A
1ms
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
-
m
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
-
m
Case Temperature, Tc --
°C
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Forward
T
ransfer
Admittance,
y
fs
-
S
Diode Forward Voltage, VSD -- V
Forward
Drain
Current,
I
F
--
A
Drain Current, ID -- A
Switching
T
ime,
SW
T
ime
-
ns
Drain-to-Source Voltage, VDS -- V
Ciss,
Coss,
Crss
-
pF
Total Gate Charge, Qg -- nC
Gate-to-Source
V
oltage,
V
GS
-
V
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
-
A
Tc=25
°C
Single pulse
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