- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄50004 > 2SK3668-ZK 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB PDF資料下載
參數(shù)資料
| 型號： | 2SK3668-ZK |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | MP-25ZK, 3 PIN |
| 文件頁數(shù)： | 4/10頁 |
| 文件大小： | 212K |
| 代理商： | 2SK3668-ZK |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SK3668
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D16547EJ2V0DS00 (2nd edition)
Date Published April 2003 NS CP(K)
Printed in Japan
2002
The mark 5
5
5 shows major revised points.
DESCRIPTION
The 2SK3668 is N-channel DMOS FET device that
features a low on-state resistance, low charge and
excellent switching characteristics, designed for high
voltage applications such as high intensity discharge
lamp drive.
FEATURES
Low gate charge
QG = 26 nC TYP. (VDD = 320 V, VGS = 10 V, ID = 10 A)
Gate voltage rating: ±30 V
Low on-state resistance
RDS(on) = 0.55
MAX. (VGS = 10 V, ID = 5.0 A)
Surface mount package available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
400
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±10
A
Drain Current (pulse)
Note1
ID(pulse)
±34
A
Total Power Dissipation (TA = 25°C)
PT1
1.5
W
Total Power Dissipation (TC = 25°C)
PT2
100
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
10
A
Single Avalanche Energy
Note2
EAS
8mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25
, VGS = 20 → 0 V, L = 100
H
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
1.25
°C/W
Channel to Ambient Thermal Resistane
Rth(ch-A)
83.3
°C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3668-ZK
TO-263 (MP-25ZK)
(TO-263)
5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK367 | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK367-GR | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK367-O | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3685-01 | 19 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 2SK3689-01 | 16 A, 600 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3669(TE16L1,NQ) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 100V 10A PW-MOLD 制造商:Toshiba America Electronic Components 功能描述:Semi, Discrete, MOS, FET, TOSH, Pw-Mold, |
| 2SK366-BL(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH 12mA Si 3-Pin |
| 2SK366-GR(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH 6.5mA Si 3-Pin |
| 2SK3670(F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 150V 0.67A 3-Pin TO-92 Mod Bulk |
| 2SK3670(F,M) | 功能描述:MOSFET N-CH 制造商:toshiba semiconductor and storage 系列:* 包裝:散裝 零件狀態(tài):停產(chǎn) 安裝類型:通孔 供應(yīng)商器件封裝:TO-92MOD 封裝/外殼:TO-226-3，TO-92-3 長體 標(biāo)準(zhǔn)包裝:1 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。