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參數(shù)資料
| 型號(hào)： | 2SK3689-01 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 16 A, 600 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 109K |
| 代理商： | 2SK3689-01 |
1
VGS=-30V
Tch 150°C
L=1.74mH
VCC=60V *1
VDS 600V
*2
Ta=25°C
Tc=25°C
Item
Symbol
Ratings
Unit
Remarks
Drain-source voltage
VDS
600
VDSX
600
Continuous drain current
ID
±16
Pulsed drain current
ID(puls]
±64
Gate-source voltage
VGS
±30
Non-Repetitive
IAS
16
Maximum avalanche current
Non-Repetitive
EAS
242.7
Maximum avalanche energy
Maximum Drain-Source dV/dt
dVDS/dt
20
Peak diode recovery dV/dt
dV/dt
5
Max. power dissipation
PD
2.50
235
Operating and storage
Tch
+150
temperature range
Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3689-01
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
VDS=600V VGS=0V
VDS=480V VGS=0V
VGS=±30V
ID=8A
VGS=10V
ID=8A
VDS=25V
VCC=300V ID=8A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
A
nA
S
pF
nC
A
V
s
C
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
0.532
50.0
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250A
VGS=0V
ID= 250A
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=300V
ID=16A
VGS=10V
L=1.74mH Tch=25°C
IF=16A VGS=0V Tch=25°C
IF=16A VGS=0V
-di/dt=100A/s
Tch=25°C
V
A
V
A
mJ
kV/s
W
°C
600
3.0
5.0
25
250
10
100
0.42
0.57
6.5
13
1590
2390
200
300
812
29
43.5
16
24
58
87
812
34
51
12
18
10
15
16
1.00
1.50
0.68
7.8
-55 to +150
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
200401
<
=
<
=
*1 See to Avalanche Energy Graph
*2 IF -ID, -di/dt=50A/s, VCC BVDSS, Tch 150°C
<
=
<
=
<
=
11.6±0.2
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| 2SK3689-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK368-GR(TE85L,F) | 制造商:Toshiba 功能描述:Trans JFET N-CH 6.5mA 3-Pin TO-236 T/R |
| 2SK368-Y(TE85L,F) | 制造商:Toshiba 功能描述:Trans JFET N-CH 6.5mA 3-Pin TO-236 T/R |
| 2SK3690-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 1.8 Ohms;ID 4.5A;TO-220AB;PD 80W;VGS +/-30V |
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