- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄155768 > 2SK3669 10 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK3669 |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-7J1B, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 188K |
| 代理商： | 2SK3669 |
2SK3669
2005-03-04
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VII)
2SK3669
Switching Regulator, Audio Amplifier and Motor Drive
Applications
Low drain-source ON-resistance: RDS (ON) = 95 m (typ.)
High forward transfer admittance: |Yfs| = 6 S (typ.)
Low leakage current: IDSS = 100 A (max) (VDS = 100 V)
Enhancement mode : Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
= 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
100
V
Drain-gate voltage (RGS = 20 k)
VDGR
100
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
10
Pulse (tw ≤ 10 ms)
(Note 1)
IDP
15
Drain current
Pulse (tw ≤ 1 ms)
(Note 1)
IDP
28
A
Drain power dissipation (Tc
= 25°C)
PD
20
W
Single-pulse avalanche energy
(Note 2)
EAS
280
mJ
Avalanche current
IAR
10
A
Repetitive avalanche energy
(Note 3)
EAR
2
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
6.25
°C/ W
Thermal resistance, channel to ambient
Rth (cha)
125
°C/ W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 3.44 mH, IAR = 10 A, RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3680-01 | 52 A, 500 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 2SK3681-01 | 43 A, 600 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 2SK3742 | Si, POWER, FET |
| 2SK3891-01R | 17 A, 700 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK4005-01MR | 6 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3669(TE16L1,NQ) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 100V 10A PW-MOLD 制造商:Toshiba America Electronic Components 功能描述:Semi, Discrete, MOS, FET, TOSH, Pw-Mold, |
| 2SK366-BL(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH 12mA Si 3-Pin |
| 2SK366-GR(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH 6.5mA Si 3-Pin |
| 2SK3670(F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 150V 0.67A 3-Pin TO-92 Mod Bulk |
| 2SK3670(F,M) | 功能描述:MOSFET N-CH 制造商:toshiba semiconductor and storage 系列:* 包裝:散裝 零件狀態(tài):停產(chǎn) 安裝類型:通孔 供應(yīng)商器件封裝:TO-92MOD 封裝/外殼:TO-226-3，TO-92-3 長體 標(biāo)準(zhǔn)包裝:1 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。