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參數(shù)資料
| 型號(hào)： | 2SK369-BL |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 16 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 封裝： | 2-5F1D, SC-43, 3 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 754K |
| 代理商： | 2SK369-BL |
2SK369
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK369
For Low Noise Audio Amplifier Applications
Suitable for use as first stage for equalizer and MC head amplifiers.
High |Yfs|: |Yfs| = 40 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 5 mA)
High breakdown voltage: VGDS = 40 V (min)
Super low noise: NF = 1.0dB (typ.)
(VDS = 10 V, ID = 5 mA, f = 1 kHz, RG = 100 )
High input impedance: IGSS = 1 nA (max) (VGS = 30 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
40
V
Gate current
IG
10
mA
Drain power dissipation
PD
400
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = 30 V, VDS = 0
1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = 100 μA
40
V
Drain current
IDSS
(Note 1)
VDS = 10 V, VGS = 0
5.0
30
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 μA
0.3
1.2
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz,
(IDSS = 5 mA)
25
40
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
75
pF
Reverse transfer capacitance
Crss
VGD = 10 V, ID = 0, f = 1 MHz
15
pF
NF (1)
VDS = 10 V, RG = 100 Ω, ID = 5 mA,
f
= 100 Hz
5
10
Noise figure
(Note 2)
NF (2)
VDS = 10 V, RG = 100 Ω, ID = 5 mA,
f
= 1 kHz
1
2
dB
Note 1: IDSS classification GR: 5.0~10.0 mA, BL: 8.0~16.0 mA, V: 14.0~30.0 mA
Note 2: Use this in the low voltage region (VDS
< 15 V) for low noise applications.
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1D
Weight: 0.21 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK369-GR | 10 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2SK3692-01 | 17 A, 450 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3700 | 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK369-BL(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK369GR | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK369-GR(F) | 制造商:Toshiba 功能描述:Trans JFET N-CH 10mA 3-Pin TO-92 Bulk |
| 2SK369GR(TPE2,F) | 制造商:Toshiba America Electronic Components 功能描述:LOW NOISE N-CHANNEL JFET - Tape and Reel |
| 2SK369GRF | 功能描述:JFET Low Noise N-Ch VGDS -40V NF 1.0dB RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
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