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參數(shù)資料
| 型號： | 2SK3700 |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-16C1B, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 263K |
| 代理商： | 2SK3700 |
2SK3700
2004-12-08
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ)
2SK3700
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 2.0 (typ.)
High forward transfer admittance: |Yfs| = 4.5 S (typ.)
Low leakage current: IDSS = 100 A (max) (VDS = 720 V)
Enhancement model: Vth = 2.0 ～ 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
900
V
Drain-gate voltage (RGS = 20 k)
VDGR
900
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
5
Drain current
Pulse (Note 1)
IDP
15
A
Drain power dissipation
PD
150
W
Single pulse avalanche energy
(Note 2)
EAS
351
mJ
Avalanche current
IAR
5
A
Repetitive avalanche energy (Note 3)
EAR
15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
0.833
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
50
°C/W
Note 1: Ensure that the temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 25.7mH, RG = 25 , IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3700(F) | 功能描述:MOSFET N-Ch 700V PWR FET ID 5A PD 150W 1150pF RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3702 | 功能描述:MOSFET N-CH 60V 18A TO-220ML RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3703 | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3703-1E | 功能描述:MOSFET NCH 4V DRIVE SERIES RoHS:否 制造商:NXP Semiconductors 晶體管極性:N-Channel 汲極/源極擊穿電壓:30 V 閘/源擊穿電壓: 漏極連續(xù)電流:180 mA 電阻汲極/源極 RDS（導(dǎo)通）:4.5 Ohms 配置: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-416 封裝:Reel |
| 2SK3703-1EX | 制造商:ON Semiconductor 功能描述:NCH 4V DRIVE SERIES |
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