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參數(shù)資料
| 型號(hào)： | 2SK3692-01 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 17 A, 450 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 104K |
| 代理商： | 2SK3692-01 |
2
Characteristics
2SK3692-01
FUJI POWER MOSFET
0
255075
100
125
150
0
50
100
150
200
250
300
Allowable Power Dissipation
PD=f(Tc)
PD
[W
]
Tc [
°C]
04
8
12
16
20
0
5
10
15
20
25
30
20V
10V
8V
7.5V
7.0V
ID
[
A
]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80
s pulse test,Tch=25 °C
VGS=6.5V
0
1
234
5678
9
10
0.1
1
10
ID
[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80
s pulse test,VDS=25V,Tch=25°C
0.1
1
10
1
10
g
fs
[S
]
ID [A]
Typical Transconductance
gfs=f(ID):80
s pulse test,VDS=25V,Tch=25°C
0
5
10
15
20
25
30
35
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
RD
S
(o
n
)[
]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
s pulse test,Tch=25°C
10V
20V
8V
7.5V
7.0V
VGS=6.5V
-50
-25
0
25
50
75
100
125
150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RD
S
(o
n
)[
]
Tch [
°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=8.5A,VGS=10V
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