參數(shù)資料
型號： 2SK3700
元件分類： JFETs
英文描述： 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： LEAD FREE, 2-16C1B, 3 PIN
文件頁數(shù)： 2/2頁
文件大?。?/td> 263K
代理商： 2SK3700
2SK3700
2004-12-08
2
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
A
Gate-source breakdown voltage
V (BR) GSS
IG = ±10μA, VDS = 0V
±30
―
V
Drain cut-OFF current
IDSS
VDS = 720 V, VGS = 0 V
100
A
Drain-source breakdown voltage
V (BR) DSS
IG = 10mA, VGS = 0 V
900
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 3 A
2.0
2.5
Forward transfer admittance
Yfs
VDS = 20 V, ID = 3 A
2.0
4.5
S
Input capacitance
Ciss
1150
Reverse transfer capacitance
Crss
20
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
100
pF
Rise time
tr
30
Turn-ON time
ton
70
Fall time
tf
60
Switching time
Turn-OFF time
toff
170
ns
Total gate charge
(gate-source plus gate-drain)
Qg
28
Gate-source charge
Qgs
17
Gate-drain (“miller”) charge
Qgd
VDD≒400 V, VGS = 10 V, ID = 5 A
11
nC
Source-Drain Ratings and Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
5
A
Pulse drain reverse current
(Note 1)
IDRP
15
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
900
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V,
dIDR/dt = 100 A/s
5.4
μ
C
Marking
Duty <= 1%, tw = 10 s
0 V
10 V
VGS
RL = 133
VDD≒400 V
ID = 3 A
VOUT
50
K3700
TOSHIBA
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
相關(guān)PDF資料
PDF描述
2SK3700 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3702 18 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SJ653 37 A, 60 V, 0.037 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK1420 25 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK1904 10 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3700(F) 功能描述:MOSFET N-Ch 700V PWR FET ID 5A PD 150W 1150pF RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK3702 功能描述:MOSFET N-CH 60V 18A TO-220ML RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
2SK3703 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK3703-1E 功能描述:MOSFET NCH 4V DRIVE SERIES RoHS:否 制造商:NXP Semiconductors 晶體管極性:N-Channel 汲極/源極擊穿電壓:30 V 閘/源擊穿電壓: 漏極連續(xù)電流:180 mA 電阻汲極/源極 RDS（導(dǎo)通）:4.5 Ohms 配置: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-416 封裝:Reel
2SK3703-1EX 制造商:ON Semiconductor 功能描述:NCH 4V DRIVE SERIES
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