參數(shù)資料
型號(hào)： 2SK372-Y
元件分類： 小信號(hào)晶體管
英文描述： N-CHANNEL, Si, SMALL SIGNAL, JFET
封裝： 2-4E1C, 3 PIN
文件頁數(shù)： 1/5頁
文件大小： 183K
代理商： 2SK372-Y
2SK372
2003-03-26
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK372
For Audio Amplifier, Analog-Switch, Constant Current
and Impedance Converter Applications
High breakdown voltage: VGDS = 40 V
High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)
Low RDS (ON): RDS (ON) = 20 (typ.) (IDSS = 15 mA)
Small package
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
-40
V
Gate current
IG
10
mA
Drain power dissipation
PD
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = -30 V, VDS = 0
-1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = -100 mA
-40
V
Drain current
IDSS
(Note 1)
VDS = 10 V, VGS = 0
5.0
30
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 mA
-0.3
-1.2
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz (Note 2)
25
60
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
75
pF
Reverse transfer capacitance
Crss
VDG = 10 V, ID = 0, f = 1 MHz
15
pF
Drain-source ON resistance
RDS (ON)
VDS = 10 mV, VGS = 0
(Note 2)
20
W
Note 1: IDSS classification GR: 5.0~10.0 mA, BL: 8.0~16.0 mA, Y: 14.0~30.0 mA
Note 2: Concition of the typical value IDSS = 15 mA
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-4E1C
Weight: 0.13 g (typ.)
相關(guān)PDF資料
PDF描述
2SK372 N-CHANNEL, Si, SMALL SIGNAL, JFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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