參數(shù)資料
型號(hào)： 2SK373-GR
元件分類(lèi)： 小信號(hào)晶體管
英文描述： N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
封裝： 2-5F1C, SC-43, 3 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 141K
代理商： 2SK373-GR
2SK373
2003-03-26
1
TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
2SK373
For Audio, High Voltage Amplifier and Constant Current
Applications
High breakdown voltage: VGDS = 100 V (min)
High input impedance: IGSS = 1.0 nA (max) (VGS = 80 V)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
-100
V
Gate current
IG
10
mA
Drain power dissipation
PD
400
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = -80 V, VDS = 0
-1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = -100 mA
-100
V
Drain current
IDSS
(Note)
VDS = 10 V, VGS = 0
0.6
6.5
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 mA
-0.4
-3.5
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz
1.5
4.6
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
13
pF
Reverse transfer capacitance
Crss
VDG = 10 V, ID = 0, f = 1 MHz
3
pF
Noise figure
NF
VDS = 10 V, VGS = 0, RG = 100 kW,
f
= 100 Hz
0.5
dB
Note: IDSS classification O: 0.6~1.4 mA, Y: 1.2~3.0 mA, GR: 2.6~6.5 mA
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1C
Weight: 0.21 g (typ.)
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