參數(shù)資料
型號(hào)： 2SK3787-01MR
廠商： FUJI ELECTRIC CO LTD
元件分類(lèi)： JFETs
英文描述： 4.2 A, 800 V, 3.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220AB, 3 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 117K
代理商： 2SK3787-01MR
1
TO-220F
Test Conditions
ID= 250A
VGS=0V
ID= 250A
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=400V
ID=4.2A
VGS=10V
IF=4.2A VGS=0V Tch=25°C
IF=4.2A VGS=0V
-di/dt=100A/s
Tch=25°C
VGS=-30V
Tch 150°C
*1
*2
VDS 800V
*3
Ta=25°C
Tc=25°C
t=60sec, f=60Hz
Item
Symbol
Ratings
Unit
Remarks
Drain-source voltage
VDS
800
VDSX
800
Continuous drain current
ID
4.2
Pulsed drain current
ID(puls]
±16.8
Gate-source voltage
VGS
±30
Non-Repetitive
IAS
4.2
Maximum avalanche current
Non-Repetitive
EAS
418.9
Maximum avalanche energy
Repetitive
EAR
4.3
mJ
Maximum avalanche energy
Maximum Drain-Source dV/dt
dVDS/dt
40
Peak diode recovery dV/dt
dV/dt
5
Max. power dissipation
PD
2.16
43
Operating and storage
Tch
+150
temperature range
Tstg
Isolation voltage
VISO
2
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3787-01MR
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
VDS=800V VGS=0V
VDS=640V VGS=0V
VGS=±30V
ID=2.1A
VGS=10V
ID=2.1A
VDS=25V
VCC=600V ID=2.1A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
A
nA
S
pF
nC
V
ns
C
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
2.907
58.0
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
V
A
V
A
mJ
kV/s
W
°C
kVrms
800
3.0
5.0
25
250
100
2.6
3.4
24
445
670
65
95
3
4.5
19
28
711
32
49
16
24
15.5
24.0
6.5
10.0
3.0
4.5
0.90
1.50
1.5
5.5
-55 to +150
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
200311
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=
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*1 Starting Tch=25°C,IAS=1.7A,L=266mH,Vcc=80V,RG=50
EAS limited by maximum channel temperature and avalanche current.
See to the ‘Avalanche Energy’ graph.
*2 Repetitive ratimg : Pulse width limited maximum channel temperature.
See to the ‘Transient Thermal impedance’ graph.
*3 IF -ID, -di/dt=50A/s, VCC BVDSS, Tch 150°C
<
=
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=
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Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
相關(guān)PDF資料
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2SK3812-ZP 110 A, 60 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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