- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370116 > 2SK3793 (NEC Corp.) SWITCHING N-CHANNEL POWER MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK3793 |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET |
| 中文描述： | 開關(guān)N溝道功率MOSFET |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 175K |
| 代理商： | 2SK3793 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SK3793
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D16777EJ1V0DS00 (1st edition)
Date Published March 2004 NS CP(K)
Printed in Japan
2004
DESCRIPTION
The 2SK3793 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance
R
DS(on)1
= 125 m
MAX. (V
GS
= 10
V, I
D
= 6
A)
R
DS(on)2
= 148 m
MAX. (V
GS
= 4.5
V, I
D
= 6 A)
Low C
iss
: C
iss
= 900 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
100
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±20
V
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
I
D(DC)
±12
A
I
D(pulse)
±22
A
Total Power Dissipation (T
C
= 25°C)
P
T1
20
W
Total Power Dissipation (T
A
= 25°C)
P
T2
2.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
T
stg
55 to +150
°C
I
AS
10
A
E
AS
10
mJ
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 50 V, R
G
= 25
, V
GS
= 20
→
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3793
Isolated TO-220
(Isolated TO-220)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3794 | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3794-Z | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3811 | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3811-ZP | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3812 | SWITCHING N-CHANNEL POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3793-AZ | 功能描述:MOSFET N-CH 100V MP-45F/TO-220 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3796-2-TL-E | 功能描述:JFET NCH J-FET RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2SK3796-3-TL-E | 功能描述:JFET Junction FET 30V 10mA Nch SMCP RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2SK3796-4-TL-E | 功能描述:JFET NCH J-FET RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2SK3797 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 600V TO-220SIS 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N, 600V, TO-220SIS |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。