參數(shù)資料
型號： 2SK3935
元件分類： JFETs
英文描述： 17 A, 450 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： LEAD FREE, 2-10U1B, SC-67, 3 PIN
文件頁數(shù)： 1/6頁
文件大?。?/td> 224K
代理商： 2SK3935
2SK3935
2005-01-24
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (
π-MOSVI)
2SK3935
Switching Regulator Applications
Low drain-source ON resistance
: RDS (ON) = 0.18Ω (typ.)
High forward transfer admittance
: |Yfs| = 10 S (typ.)
Low leakage current : IDSS = 100 A (max) (VDS = 450 V)
Enhancement model : Vth = 2.0 to 4.0 V
(VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
450
V
Drain-gate voltage (RGS = 20 k)
VDGR
450
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
17
A
Drain current
Pulse(Note 1)
IDP
68
A
Drain power dissipation
PD
50
W
Single pulse avalanche energy
(Note 2)
EAS
918
mJ
Avalanche current
IAR
17
A
Repetitive avalanche energy (Note 3)
EAR
5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
2.5
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
62.5
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 5.3 mH, RG = 25Ω, IAR = 17 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
1. Gate
2. Drain
3. Source
1
3
2
相關PDF資料
PDF描述
2SK3943-ZP 82 A, 40 V, 0.0056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
2SK3944 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SK3947 6 A, 600 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3948GU SMALL SIGNAL, FET
2SK3974-01L 1 A, 600 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
2SK3935(Q) 制造商:Toshiba 功能描述:Nch 450V 17A 0.25@10V TO220SIS Bulk
2SK3935(Q,M) 功能描述:MOSFET MOSFET N-Ch, 450V, 17A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK3936(Q) 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 500V 23A TO-3PN
2SK3940(Q) 制造商:Toshiba 功能描述:Trans MOSFET N-CH 75V 70A 3-Pin(3+Tab) TO-3PN Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 75V 70A TO-3PN 制造商:Toshiba America Electronic Components 功能描述:MOSFER N-ch 75V 70A 150W TO-3P(N)
2SK3943-ZP-E1-AY 功能描述:MOSFET N-CH 40V MP-25ZP/TO-263 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
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