參數(shù)資料
型號： 2SK3947
元件分類： JFETs
英文描述： 6 A, 600 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： LEAD FREE, 2-10U1B, SC-67, 3 PIN
文件頁數(shù)： 2/6頁
文件大小： 179K
代理商： 2SK3947
2SK3947
2005-03-22
2
Electrical Characteristics (Ta ==== 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
A
Gate-source breakdown voltage
V (BR) GSS
IG = ±10 A, VGS = 0 V
±30
V
Drain cutoff current
IDSS
VDS = 600 V, VGS = 0 V
100
A
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
600
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 3 A
1.1
1.4
Forward transfer admittance
Yfs
VDS = 10 V, ID = 3 A
1.2
5.0
S
Input capacitance
Ciss
1050
Reverse transfer capacitance
Crss
10
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
110
pF
Rise time
tr
20
Turn-on time
ton
40
Fall time
tf
35
Switching time
Turn-off time
toff
130
ns
Total gate charge
Qg
28
Gate-source charge
Qgs
16
Gate-drain charge
Qgd
VDD 400 V, VGS = 10 V, ID = 6 A
12
nC
Source-Drain Ratings and Characteristics (Ta ==== 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
6
A
Pulse drain reverse current
(Note 1)
IDRP
24
A
Forward voltage (diode)
VDSF
IDR = 6 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
140
ns
Reverse recovery charge
Qrr
IDR = 6 A, VGS = 0 V,
dIDR/dt = 100 A/s
0.3
C
Marking
RL =
66
0 V
10 V
VGS
VDD 200 V
ID = 3 A
VOUT
50
Duty <= 1%, tw = 10 s
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K3947
Part No. (or abbreviation code)
相關(guān)PDF資料
PDF描述
2SK3948GU SMALL SIGNAL, FET
2SK3974-01L 1 A, 600 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3984-ZK 18000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
2SK3991-ZK-E2 30000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
2SK3991-ZK-E1-AZ 30000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3947(Q) 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) TO-220SIS
2SK3977-TL-E 制造商:SANYO 功能描述:Nch 100V 10A 92m@10V TP-FA Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 100V 10A TO251 制造商:Sanyo 功能描述:0
2SK3979-TL-E 制造商:SANYO 功能描述:Nch 200V 6A 450m@10V TP-FA Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 200V 6A TP-FA 制造商:Sanyo 功能描述:0
2SK3980-TD-E 制造商:SANYO 功能描述:Nch 60V 0.9A obo Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 60V 0.9A SOT89 制造商:Sanyo 功能描述:0
2SK3984-ZK-E1-AY 功能描述:MOSFET N-CH 100V 18A TO-252 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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