參數(shù)資料
型號(hào): 2SK3994
元件分類: JFETs
英文描述: 20 A, 250 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, 2-10R1B, SC-67, 3 PIN
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 408K
代理商: 2SK3994
2SK3994
2005-03-18
1
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (πMOS V)
2SK3994
Switching Regulator, DC/DC Converter Applications
Motor Drive Applications
Low drainsource ON-resistance
: RDS (ON) = 90 m (typ.)
High forward transfer admittance
: |Yfs| = 10 S (typ.)
Low leakage current : IDSS = 100 A (max) (VDS = 250 V)
Enhancement mode
: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drainsource voltage
VDSS
250
V
Draingate voltage (RGS = 20 k)
VDGR
250
V
Gatesource voltage
VGSS
±30
V
DC (Note 1)
ID
20
A
Drain current
Pulse (Note 1)
IDP
80
A
Drain power dissipation (Tc = 25°C)
PD
45
W
Single-pulse avalanche energy
(Note 2)
EAS
487
mJ
Avalanche current
IAR
20
A
Repetitive avalanche energy (Note 3)
EAR
4.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
2.78
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
62.5
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 2.06 mH, RG = 25 , IAR = 20 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
相關(guān)PDF資料
PDF描述
2SK40-C N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2SK40-B N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2SK40-D N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2SK4003 3 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET
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