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參數(shù)資料
| 型號(hào)： | 2SK4014 |
| 元件分類： | JFETs |
| 英文描述： | 6 A, 900 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, 2-10U1B, SC-67, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 232K |
| 代理商： | 2SK4014 |
2SK4014
2010-01-29
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)
2SK4014
DC-DC Converter, Relay Drive and Motor Drive
Applications
Low drain-source ON-resistance
: RDS (ON) = 1.6 (typ.)
High forward transfer admittance
: |Yfs| = 5.0 S (typ.)
Low leakage current
: IDSS = 100 A (max) (VDS = 720 V)
Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
900
V
Drain-gate voltage (RGS = 20 k)
VDGR
900
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
6
A
Drain current
Pulse (Note 1)
IDP
18
A
Drain power dissipation (Tc = 25°C)
PD
45
W
Single-pulse avalanche energy
(Note 2)
EAS
972
mJ
Avalanche current
IAR
6
A
Repetitive avalanche energy (Note 3)
EAR
4.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
2.78
°C / W
Thermal resistance, channel to ambient
Rth (cha)
62.5
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 49.5 mH, RG = 25 , IAR = 6 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
1: Gate
2: Drain
3: Source
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
1
3
2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK4014(Q) | 制造商:Toshiba 功能描述:Nch 900V 6A 2.0@10V TO220SIS 制造商:Toshiba 功能描述:Nch 900V 6A 2.0@10V TO220SIS Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N CH 6A 900V TO220IS 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-Channel 900V 6A TO220SIS 制造商:Toshiba America Electronic Components 功能描述:Transistor,MOSFET |
| 2SK4014(Q,M) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 900V 6A TO220SIS |
| 2SK4014_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:DC/DC Converter, Relay Drive and Motor Drive Applications |
| 2SK4014_10 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:DC-DC Converter, Relay Drive and Motor Drive |
| 2SK4015 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator Applications |
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