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參數(shù)資料
| 型號： | 2SK4019 |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-7J2B, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 727K |
| 代理商： | 2SK4019 |
2SK4019
2008-06-16
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L
2
πMOS V)
2SK4019
Chopper Regulators, DC-DC Converters and Motor Drive
Applications
4-V gate drive
Low drain-source ON-resistance: RDS (ON) = 0.17 Ω (typ.)
High forward transfer admittance: |Yfs| = 4.5 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 100 V)
Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drainsource voltage
VDSS
100
V
Draingate voltage (RGS = 20 kΩ)
VDGR
100
V
Gatesource voltage
VGSS
±20
V
DC (Note 1)
ID
5
A
Drain current
Pulse (Note 1)
IDP
20
A
Drain power dissipation (Tc = 25°C)
PD
20
W
Single-pulse avalanche energy
(Note 2)
EAS
180
mJ
Avalanche current
IAR
5
A
Repetitive avalanche energy (Note 3)
EAR
2
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
6.25
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
125
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 11.6 mH, RG = 25 Ω, IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
2.3
1.1
± 0.2
0.9
0.6
± 0.15
5.2
± 0.2
2.3
0.6 MAX.
1.
5
±
0.2
6.5
± 0.2
1
2
3
0.6 MAX.
5.
5
±
0.2
2.3
±
0.
2
0.6
± 0.15
5.
7
1.
6
4.1
±
0.
2
0.8 MAX.
1.1 MAX.
3
2
1
1. GATE
2. DRAIN
（
HEAT SINK）
3. SOURSE
JEDEC
JEITA
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
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