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參數(shù)資料
| 型號： | 2SK4078-ZK-E1-AY |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 50 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封裝： | LEAD FREE, TO-252, MP-3ZK, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 178K |
| 代理商： | 2SK4078-ZK-E1-AY |
Data Sheet D18885EJ1V0DS
2
2SK4078
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V
1
μA
Gate Leakage Current
IGSS
VGS =
±20 V, VDS = 0 V
±100
nA
Gate to Source Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 25 A
7.0
S
Drain to Source On-state Resistance
Note
RDS(on)1
VGS = 10 V, ID = 25 A
6.3
8.5
m
Ω
RDS(on)2
VGS = 4.5 V, ID = 13 A
9.5
14.0
m
Ω
Input Capacitance
Ciss
VDS = 10 V,
2300
pF
Output Capacitance
Coss
VGS = 0 V,
360
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
220
pF
Turn-on Delay Time
td(on)
VDD = 20 V, ID = 25 A,
12
ns
Rise Time
tr
VGS = 10 V,
15
ns
Turn-off Delay Time
td(off)
RG = 0
Ω
51
ns
Fall Time
tf
9
ns
Total Gate Charge
QG
VDD = 32 V,
45
nC
Gate to Source Charge
QGS
VGS = 10 V,
7
nC
Gate to Drain Charge
QGD
ID = 50 A
13
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 50 A, VGS = 0 V
1.5
V
Reverse Recovery Time
trr
IF = 50 A, VGS = 0 V,
30
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
μs
26
nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
Ω
50
Ω
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
Ω
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
≤ 1%
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
μ
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK4078-ZK-E2-AY | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK408 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:SILICON N CHANNEL MOS FET |
| 2SK4080-ZK-E1-AY | 功能描述:MOSFET 30V N-CH MP-3ZK/TO-252 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK4080-ZK-E2-AY | 功能描述:MOSFET 30V N-CH MP-3ZK/TO-252 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK4081 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
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