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參數(shù)資料
| 型號： | 2STL1360 |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-92 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 619K |
| 代理商： | 2STL1360 |
2STL1360, 2STX1360
10/10
Doc ID 11763 Rev 3
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2STR2160 | 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2STR2215 | 1500 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2STW1693 | 6 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-247 |
| 2STX2360 | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2WX03101-1801-4F | PCB CONNECTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2STL1360_09 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Low voltage fast-switching NPN power transistors |
| 2STL1525 | 功能描述:兩極晶體管 - BJT NPN Trans PB-HCD 25V VCEO 5A IC RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2STL1525-AP | 功能描述:兩極晶體管 - BJT 25V Vceo 5A NPN High Gain Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2STL2580 | 功能描述:兩極晶體管 - BJT High Volt NPN Trans 800V Vces 400V Vceo RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2STN1360 | 功能描述:兩極晶體管 - BJT LOW VOLTAGE FAST SWITCHING NPN POWER RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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