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參數(shù)資料
| 型號： | 30A01SP |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Low-Frequency General-Purpose Amplifier Applications |
| 中文描述： | 低頻通用放大器應(yīng)用 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 41K |
| 代理商： | 30A01SP |
30A01SP
No.7512-1/4
Applications
Low-frequency power amplifier, muting circuit.
Features
Large current capacity.
Low collector-to-emitter saturation voltage (resistance).
RCE(sat) typ=0.67
[IC=0.3A, IB=15mA].
Small ON-resistance (Ron).
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Ratings
Unit
V
V
V
mA
mA
mW
°
C
°
C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
--30
--30
--5
--300
--600
400
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
--0.1
--0.1
500
Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Marking : XQ
ICBO
IEBO
hFE
VCB=--30V, IE=0
VEB=--4V, IC=0
VCE=--2V, IC=--10mA
μ
A
μ
A
200
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7512
30A01SP
Low-Frequency
General-Purpose Amplifier Applications
Package Dimensions
unit : mm
2033A
[30A01SP]
O3003 TS IM TA-100647
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP Epitaxial Planar Silicon Transistor
1 : Emitter
2 : Collector
3 : Base
SANYO : SPA
4.0
0.4
0.5
0.4
0
1
3
1
1
1.3
2
3
2.2
0.4
1.3
3.0
3.8nom
0
0
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