- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄358641 > 3LP02SP (Sanyo Electric Co.,Ltd.) P-Channel Silicon MOSFET(Ultrahigh-Speed Switching Applications)(超高速轉(zhuǎn)換應(yīng)用的P溝道硅MOSFET) PDF資料下載
參數(shù)資料
| 型號(hào)： | 3LP02SP |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | P-Channel Silicon MOSFET(Ultrahigh-Speed Switching Applications)(超高速轉(zhuǎn)換應(yīng)用的P溝道硅MOSFET) |
| 中文描述： | P溝道MOSFET的硅（超高速開(kāi)關(guān)應(yīng)用）（超高速轉(zhuǎn)換應(yīng)用的P溝道硅MOSFET的） |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 41K |
| 代理商： | 3LP02SP |
81000TS (KOTO) TA-2009 No.6554-1/4
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
3LP02SP
Ultrahigh-Speed Switching Applications
Ordering number:ENN6554
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Specifications
Absolute Maximum Ratings
at Ta = 25C
Electrical Characteristics
at Ta = 25C
Package Dimensions
unit:mm
2180
[3LP02SP]
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· 2.5V drive.
1 : Source
2 : Drain
3 : Gate
SANYO : SPA
C
C
Marking : XD
Continued on next page.
4.0
0.4
0.5
0.4
0
1
3
1
1
1.3
2
3
2.2
0.4
1.3
3.0
3.8nom
0
0
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
t
U
e
e
g
g
a
V
a
V
)
C
D
s
p
D
r
w
e
p
m
e
p
m
e
e
(
c
o
c
o
t
t
o
P
e
T
e
T
S
S
-
D
-
G
n
D
n
D
w
o
n
a
h
C
a
S
V
V
S
S
S
S
D
G
ID
IP
D
PD
c
T
g
T
0
0
3
1
–
±
2
–
8
–
2
5
1
5
1
+
V
V
A
A
W
e
C
e
C
e
a
l
n
e
g
)
s
W
P
≤
e
y
c
y
d
,
μ
0
1
≤
%
1
n
o
p
5
0
0
h
o
5
5
–
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
y
t
U
n
–
m
p
x
a
m
e
g
a
V
t
e
C
e
C
n
w
o
d
k
a
n
D
a
k
a
e
B
e
g
e
L
e
c
o
a
V
c
o
g
a
V
a
T
d
w
S
-
D
-
Z
-
G
f
C
r
F
V
S
S
D
S
S
)
|
s
RS
D
o
RS
D
o
RS
D
o
)
R
D
G
G
|
B
I
I
(
ID
VS
D
VS
G
VS
D
VS
D
ID
=
ID
=
ID
=
V
,
V
,
I
V
I
V
0
A
m
0
A
m
A
m
,
V
V
0
1
–
0
1
–
0
5
–
0
1
–
A
0
3
–
8
±
=
1
–
=
=
m
1
=
–
=
S
G
S
D
D
D
V
V
G
V
G
G
V
0
=
0
=
1
–
1
–
=
0
3
V
A
μ
A
μ
V
S
e
G
S
S
S
0
0
0
1
1
–
±
4
–
t
e
g
e
S
e
r
n
VS
A
A
V
V
V
μ
m
4
0
0
–
5
–
5
–
0
0
=
=
=
4
–
2
e
c
n
a
m
d
A
1
3
4
5
1
e
c
n
a
e
R
e
S
-
O
e
c
o
S
-
D
c
S
1
2
3
,
S
=
=
G
S
S
1
9
2
,
,
0
0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 3LP03M | 3LP03M |
| 3LP03SS | P-Channel Silicon MOSFET General-Purpose Switching Device |
| 3LP04MH | P-Channel Silicon MOSFET General-Purpose Switching Device |
| 3MBI150U-120 | IGBT Module U-Series 1200V / 150A 3 in one-package |
| 3MBI150UC-120 | IGBT Module U-Series 1200V / 150A 3 in one-package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 3LP03M | 制造商:SANYO 制造商全稱(chēng):Sanyo Semicon Device 功能描述:3LP03M |
| 3LP03M-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 30V 0.25A SOT89 |
| 3LP03SS | 制造商:SANYO 制造商全稱(chēng):Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device |
| 3LP03SS-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 30V 0.25A SOT89 |
| 3LP03S-TL-E | 制造商:SANYO 功能描述:Pch 30V 0.25A rlbo Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET P CH 30V 0.25A SOT89 制造商:Sanyo 功能描述:0 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。