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參數(shù)資料
| 型號： | 3LP03SS |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | P-Channel Silicon MOSFET General-Purpose Switching Device |
| 中文描述： | P溝道MOSFET的硅通用開關(guān)設(shè)備 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 48K |
| 代理商： | 3LP03SS |
3LP03SS
No.8649-1/4
Features
Low ON-resistance.
High-speed switching.
2.5V drive.
High resistance to damage from ESD (TYP 300V)
[with a protection diode connected between the gate and source].
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
Ratings
Unit
V
V
A
A
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage (*1)
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
(
*
1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source.
--30
--10
--0.25
PW
≤
10
μ
s, duty cycle
≤
1%
--1
0.15
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=--8V, VDS=0V
VDS=--10V, ID=--100
μ
A
VDS=--10V, ID=--120mA
ID=--120mA, VGS=--4V
ID=--60mA, VGS=--2.5V
ID=--10mA, VGS=--1.5V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
--30
V
μ
A
μ
A
V
S
pF
pF
pF
--1
--1
--0.4
0.24
--1.4
0.4
1.5
2.0
4.0
40
1.9
2.8
8.0
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : XG
8
4.5
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN8649
83005PE MS IM TA-101198
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
3LP03SS
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
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