參數(shù)資料
型號: 3SK299
廠商: NEC Corp.
英文描述: N-Channeal GaAs Dual-Gate MES FET(N溝道砷化鎵MES場效應(yīng)管)
中文描述: ? - Channeal砷化鎵雙柵場效應(yīng)晶體管(不適用溝道砷化鎵MES的場效應(yīng)管)
文件頁數(shù): 1/6頁
文件大小: 48K
代理商: 3SK299
1995
DATA SHEET
MES FIELD EFFECT TRANSISTOR
3SK299
RF AMP. FOR UHF TV TUNER
N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR
4 PIN SMALL MINI MOLD
Document No. P11034EJ1V0DS00 (1st edition)
Date Published December 1995 P
Printed in Japan
FEATURES
Suitable for use as RF amplifier in UHF TV tuner.
Low C
rss
: 0.02 pF TYP.
High G
PS
: 20 dB TYP.
Low NF
: 1.1 dB TYP.
4 PIN SMALL MINI MOLD PACKAGE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DSX
V
G1S
V
G2S
I
D
P
T
T
ch
T
stg
13
–4.5
–4.5
40
120
125
V
V
V
mA
mW
°
C
°
C
–55 to +125
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Drain Current
I
DSX
10
μ
A
V
DS
= 13 V, V
G1S
= –4 V, V
G2S
= 0
Drain Current
I
DSS
5
20
40
mA
V
DS
= 5 V, V
G2S
= 0, V
G1S
= 0
Gate1 to Source Cutoff Voltage
V
G1S(off)
–3.5
V
V
DS
= 5 V, V
G2S
= 0 , I
D
= 100
μ
A
Gate2 to Source Cutoff Voltage
V
G2S(off)
–3.5
V
V
DS
= 5 V, V
G1S
= 0, I
D
= 100
μ
A
Gate1 Reverse Current
I
G1SS
10
μ
A
V
DS
= 0, V
G1S
= –4 V, V
G2S
= 0
Gate2 Reverse Current
I
G2SS
10
μ
A
V
DS
= 0, V
G2S
= –4 V, V
G1S
= 0
Forward Transfer Admittance
|y
fs
|
18
25
35
ms
V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA
f = 1.0 kHz
Input Capacitance
C
iss
0.5
1.0
1.5
pF
V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA
f = 1 MHz
Reverse Transfer Capacitance
C
rss
0.02
0.03
pF
Power Gain
G
PS
16.0
20.0
dB
V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA
f = 900 MHz
Noise Figure
NF
1.1
2.5
dB
I
DSS
Classification
Unit: mA
Class
U71
U72
U73
U74
Marking
U71
U72
U73
U74
I
DSS
5 to 15
10 to 25
20 to 35
30 to 40
PACKAGE DIMENSIONS
in millimeters
2.1±0.2
1.25±0.1
2
3
1
4
2
(
0
0
+
0
+
0
+
0
+
0
0
0
+
0
1. Source
2. Drain
3. Gate 2
4. Gate 1
0
(
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