參數(shù)資料
型號: 3SK319
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
中文描述: 硅N溝道雙柵場效應(yīng)晶體管超高頻射頻放大器
文件頁數(shù): 7/9頁
文件大?。?/td> 49K
代理商: 3SK319
3SK319
7
Sparameter
(V
DS
= 3.5V, V
G2S
= 3V, I
D
= 10mA, Zo = 50
)
S11
S21
S12
S22
f (MHz) MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
50
1.000
–2.8
2.41
176.3
0.00068
89.1
0.999
–2.2
100
0.998
–5.8
2.41
171.9
0.00176
88.5
0.996
–4.5
150
0.997
–9.1
2.39
167.6
0.00223
80.7
0.996
–6.7
200
0.994
–12.2
2.38
163.7
0.00303
76.6
0.994
–8.7
250
0.994
–15.1
2.37
159.8
0.00365
79.1
0.991
–11.0
300
0.986
–18.5
2.35
155.5
0.00414
75.4
0.988
–13.2
350
0.978
–21.3
2.30
151.4
0.00484
75.0
0.983
–15.3
400
0.972
–24.1
2.28
147.6
0.00533
78.0
0.980
–17.4
450
0.969
–27.0
2.26
143.6
0.00588
71.6
0.976
–19.6
500
0.954
–29.7
2.23
140.0
0.00617
69.5
0.971
–21.7
550
0.955
–32.8
2.19
135.9
0.00666
71.5
0.966
–23.7
600
0.941
–35.7
2.17
132.2
0.00672
70.6
0.960
–25.6
650
0.932
–38.3
2.14
128.6
0.00694
69.0
0.955
–27.8
700
0.924
–41.3
2.09
125.0
0.00709
71.4
0.948
–29.9
750
0.919
–44.1
2.07
121.5
0.00689
69.0
0.942
–31.8
800
0.905
–46.9
2.03
117.9
0.00699
68.9
0.937
–33.8
850
0.896
–49.2
2.00
114.7
0.00644
74.2
0.930
–35.8
900
0.884
–52.4
1.96
110.4
0.00633
75.5
0.923
–37.6
950
0.880
–54.7
1.93
107.1
0.00585
77.8
0.917
–39.8
1000
0.866
–57.7
1.89
103.8
0.00605
82.1
0.910
–41.9
相關(guān)PDF資料
PDF描述
3SK320 N CHANNEL DUAL GATE MES TYPE (UHF BAND LOW NOISE AMP, MIX)
3SK321 Silicon N-Channel Dual Gate MOS FET
3SK322 Silicon N-Channel Dual Gate MOS FET
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