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參數(shù)資料
| 型號： | 4610M-902-103 |
| 英文描述： | KONDENSATOR NETZWERK |
| 中文描述： | KONDENSATOR NETZWERK |
| 文件頁數(shù)： | 52/62頁 |
| 文件大?。?/td> | 1883K |
| 代理商： | 4610M-902-103 |
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Specifications are subject to change without notice.
332
Application Guidelines
Termination of address and control lines is typically accom-
plished with low-valued resistors placed in series at the driver
output. Selection of the proper resistance value is performed in
two steps: approximation of the proper resistance using trans-
mission line equations, and secondly, through trial and error,
changing the resistance value to account for real world devia-
tions such as PCB vias and bends.
The appropriate transmission line equations are as
follows:
Zo = characteristic line impedance
(microstrip)
87
5.98h
=
In
ohms
√ er + 1.41
(
0.8w + t
)
Td = propagation delay of the line
= 1.017
√0.475e
r + 0.67 ns/in.
Co = trace capacitance = 1000 (Td/Zo) pF/in.
Cd = equivalent trace capacitance associated with
each DRAM. It takes 0.5 inch to interconnect
one DRAM.
= 3.5pF/0.5 in. = 7 pF/in.
Zo’ = effective characteristic impedance, accounting
for capacitive loading of the DRAMs.
Zo
=
√1 + C
d/Co
Td’ = effective propagation delay, accounting for the
capacitive loading of the DRAMs
Td = Td √1 + Cd/Co
where er = relative dielectric constant of the PCB’s glass
epoxy layer
h
= distance from the trace to the ground plane
w
= width of trace
t
= thickness of trace
(Ref. MMI Systems Design Handbook, pp. 10-5 and 10-6.)
For example, for a trace with the following characteristics:
er
= 5 (for G10 glass epoxy)
h
= 30 mils
w
= 15 mils
t
= 3 mils
then, Zo = 85 ohms
Td = 0.15 ns/in.
Co = 1.76 pF/in.
Zo’ = 38 ohms
Td’ = 0.35 ns/in.
Thus on a theoretical basis, the design will require the resis-
tance of 38 ohms to match the trace impedance of the PCB.
However, the actual impedance will differ from this theoretical
value due to the non-ideal characteristics of the PCB trace
geometry (i.e., bends, curves and vias in the trace), as well as
the manufacturing variations inherent in the components and
materials. Therefore, a trial-and-error process must be employed
in order to optimize the value of the damping resistor.
The procedure involves selecting various values around the
calculated value and observing the resulting waveforms on an
oscilloscope. Choose the value that best balances the reduction
in ringing/reflection and the reduction in speed: a large resis-
tance value provides better damping, but will also add delay by
slowing the edge rate. Typically, resistance values for memory
damping will be in the range of 10 ohms to 50 ohms, with the
most common values in the 20 ohm to 30 ohm range.
Since memory damping is a type of series termination, distrib-
uted loading along the line will not be possible. That is, the
entire lumped load must be located at the end of the line, with
no other loads along the signal path. This will guarantee that the
waveform will remain undisturbed as it travels along the line. For
related reasons, the placement of the series damping resistor
should be as close to the driving device as possible.
DRAM Applications
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 4610M-902-103LF | 功能描述:電容器陣列與網(wǎng)絡(luò) 10Pin 0.01uF 20% Isolated X7R RoHS:否 制造商:AVX 電容:0.1 uF 容差:20 % 電壓額定值:6.3 V 元件數(shù)量:2 工作溫度范圍: 外殼長度:0.8 mm 外殼寬度:1.6 mm 外殼高度:0.5 mm 端接類型:SMD/SMT 系列:PG |
| 4610M-902-104 | 功能描述:電容器陣列與網(wǎng)絡(luò) 10Pin 0.1uF 20% Isolated X7R RoHS:否 制造商:AVX 電容:0.1 uF 容差:20 % 電壓額定值:6.3 V 元件數(shù)量:2 工作溫度范圍: 外殼長度:0.8 mm 外殼寬度:1.6 mm 外殼高度:0.5 mm 端接類型:SMD/SMT 系列:PG |
| 4610M-902104LF | 制造商:Bourns / JW Miller 功能描述:Cap Ceramic Network 0.1uF 50V X7R 20% SIP 5 Capacitor 125°C 制造商:Bourns 功能描述:Cap Ceramic Network 0.1uF 50V X7R 20% SIP 5 Capacitor 125°C |
| 4610M-902-104LF | 功能描述:電容器陣列與網(wǎng)絡(luò) 10Pin 0.1uF 20% Isolated X7R RoHS:否 制造商:AVX 電容:0.1 uF 容差:20 % 電壓額定值:6.3 V 元件數(shù)量:2 工作溫度范圍: 外殼長度:0.8 mm 外殼寬度:1.6 mm 外殼高度:0.5 mm 端接類型:SMD/SMT 系列:PG |
| 4610M-AP1-472LF | 制造商:Bourns Inc 功能描述: |
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