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參數(shù)資料
| 型號： | 4AJ11 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel Power MOS FET Array |
| 中文描述： | 硅P溝道功率MOS場效應管陣列 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 35K |
| 代理商： | 4AJ11 |
4AJ11
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–60
—
V
I
D = –10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
–250
AV
DS = –50 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
—
–2.0
V
I
D = –1 mA, VDS = –10 V
Static drain to source on state
resistance
R
DS(on)
—
0.09
0.13
I
D = –4 A
V
GS = –10 V*
1
—
0.12
0.17
I
D = –4 A
V
GS = –4 V*
1
Forward transfer admittance
|y
fs|
5.5
7.7
—
S
I
D = –4 A
V
DS = –10 V*
1
Input capacitance
Ciss
—
1400
—
pF
V
DS = –10 V
Output capacitance
Coss
—
720
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
220
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—
15
—
ns
I
D = –8 A
Rise time
t
r
—
120
—
ns
V
GS = –10 V
Turn-off delay time
t
d(off)
—
220
—
ns
R
L = 3.75
Fall time
t
f
—
160
—
ns
Body to drain diode forward
voltage
V
DF
—
–1.05
—
V
I
F = –8 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
190
—
sI
F = –8 A, VGS = 0,
dIF/dt = 50 A/
s
Note:
1. Pulse Test
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