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參數(shù)資料
| 型號： | 4AK17 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | FILTER LINE 250VAC 25A PANEL |
| 中文描述： | 硅N溝道功率MOS場效應(yīng)管陣列 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 50K |
| 代理商： | 4AK17 |
4AK17
3
Electrical Characteristics (Ta = 25°C) (1 Unit)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
AV
DS = 50 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
0.033
0.045
I
D = 10 A
V
GS = 10 V*
1
—
0.04
0.065
I
D = 10 A
V
GS = 4 V*
1
Forward transfer admittance
|y
fs|10
17
—
S
I
D = 10 A
V
DS = 10 V*
1
Input capacitance
Ciss
—
1400
—
pF
V
DS = 10 V
Output capacitance
Coss
—
720
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
220
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—
15
—
ns
I
D = 10 A
Rise time
t
r
—
95
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—
300
—
ns
R
L = 3
Fall time
t
f
—
170
—
ns
Body to drain diode forward
voltage
V
DF
—
1.05
—
V
I
F = 10 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
110
—
ns
I
F = 10 A, VGS = 0
dIF/dt = 50 A/
s
Note:
1. Pulse test
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