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參數(shù)資料
| 型號： | 4AM13 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel/P-Channel Power MOS FET Array(N溝道/P溝道功率MOSFET陣列) |
| 中文描述： | 硅N-Channel/P-Channel功率MOS FET陣列（不適用溝道/頁溝道功率MOSFET的陣列） |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 40K |
| 代理商： | 4AM13 |
4AM13
3
Electrical Characteristics (Ta = 25°C) (1 Unit)
N channel
P channel
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Drain to source
breakdown voltage
V
(BR)DSS
60
—
–60
—
V
I
D = 10 mA, VGS = 0
Gate to source
breakdown voltage
V
(BR)GSS
±20
—
±20
——V
I
G = ±100 A, VDS = 0
Gate to source leak
current
I
GSS
——±10
A
V
GS = ±16 V, VDS = 0
Zero gate voltage drain
current
I
DSS
—
250
—
–250 A
V
DS = 50 V, VGS = 0
Gate to source cutoff
voltage
V
GS(off)
1.0
—
2.0
–1.0
—
–2.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source
on state resistance
R
DS(on)
—
0.25
0.35
—
0.28
0.4
I
D = 1.5 A,
V
GS = 10 V*
1
—
0.35
0.5
—
0.4
0.55
I
D = 1.5 A, VGS = 4 V*
1
Forward transfer
admittance
|y
fs|
1.5
2.5
—
1.5
2.5
—
S
I
D = 1.5 A,
V
DS = 10 V*
1
Input capacitance
Ciss
—
240
—
400
—
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
—
115
—
240
—
pF
f = 1 MHz
Reverse transfer
capacitance
Crss
—
35
—
70
—
pF
Turn-on delay time
t
d(on)
—4
—
5
—
ns
I
D = 1.5 A, VGS = 10 V,
Rise time
t
r
—20
—
—25
—
ns
R
L = 20
Turn-off delay time
t
d(off)
—80
—
—180
—ns
Fall time
t
f
—40
—
—80
—
ns
Body to drain diode
forward voltage
V
DF
—
1.2
—
–1.1
—
V
I
F = 3 A, VGS = 0
Body to drain diode
reverse recovery time
t
rr
—75
—
—140
—ns
I
F = 3 A, VGS = 0,
dIF/dt = 50 A/s
Note
1. Pulse Test
Polarity of test conditions for P channel device is reversed.
Nch: See characteristic curves of 2SK973
Pch: See characteristic curves of 2SJ182
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