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參數(shù)資料
| 型號(hào)： | 4AM13 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel/P-Channel Power MOS FET Array(N溝道/P溝道功率MOSFET陣列) |
| 中文描述： | 硅N-Channel/P-Channel功率MOS FET陣列（不適用溝道/頁溝道功率MOSFET的陣列） |
| 文件頁數(shù)： | 4/5頁 |
| 文件大小： | 40K |
| 代理商： | 4AM13 |
4AM13
4
6
50
150
Ambient Temperature Ta (°C)
Maximum Channel Dissipation Curve
5
1
25
75
125
0
3
4
Channel
Dissipation
Pch
(W)
4 Device Operation
2
100
3 Device Operation
2 Device Operation
1 Device Operation
Condition : Channel Dissipation of
each die is identical
30
50
150
Case Temperature TC (°C)
Maximum Channel Dissipation Curve
25
75
125
0
20
Channel
Dissipation
Pch
(W)
4 Device Operation
10
100
3 Device Operation
2 Device Operation
1 Device Operation
Condition : Channel Dissipation of
each die is identical
–50
–5
–0.05
–1
–10
–100
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
–10
–0.1 –0.3
–3
–30
Ta = 25°C
10
s
100
s
DC
Operation
(T
C =
25°C)
1 ms
PW
=
10
ms
(1
Shot)
Maximum Safe Operation Area
(P-Channel)
–20
–2
–1
–0.5
–0.2
–0.1
Operation
in
this
area
is
limited
by
R
DS
(on)
50
0.05
1
10
100
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
10
0.1
0.3
3
30
Ta = 25°C
10
s
100
s
DC
Operation
(T
C =
25°C)
1 ms
PW
=
10
ms
(1
Shot)
Maximum Safe Operation Area
(N-Channel)
30
3
1
0.3
0.1
Operation
in
this
area
is
limited
by
R
DS
(on)
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