參數(shù)資料
型號(hào): 4MBI150T-060
廠商: FUJI ELECTRIC CO LTD
元件分類(lèi): IGBT 晶體管
英文描述: IGBT Module
中文描述: 600 V, N-CHANNEL IGBT
封裝: MODULE-24
文件頁(yè)數(shù): 3/14頁(yè)
文件大?。?/td> 631K
代理商: 4MBI150T-060
H04-004-03
14
MS5F 05550
11
0
100
200
300
10
100
1000
ton
tr
toff
tf
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=+-15V, Rg=24ohm, Tj= 25C
S
w
itc
hi
ng
tim
e
:
to
n,
tr
,t
of
f,
tf
[n
se
c
]
Collector current : Ic [ A ]
0
100
200
300
10
100
1000
tf
tr
ton
toff
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=+-15V, Rg= 24ohm, Tj= 125C
Collector current : Ic [ A ]
S
w
itc
hi
ng
tim
e
:
to
n,
tr
,t
of
f,
tf
[n
se
c
]
5
10
100
10
100
1000
5000
toff
ton
tr
tf
[ Inverter ]
Switching time vs. Gate resistance (typ.)
Vcc=300V, Ic=150A, VGE=+-15V, Tj= 25C
Gate resistance : Rg [ ohm ]
S
w
itc
hi
ng
tim
e
:
to
n,
tr
,t
of
f,
tf
[n
se
c
]
0
100
200
300
0
5
10
15
Err(25C)
Eoff(25C)
Eon(25C)
Err(125C)
Eoff(125C)
Eon(125C)
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=300V, VGE=+-15V, Rg=24ohm
S
w
itc
hi
ng
lo
ss
:
E
on
,E
of
f,
E
rr
[m
J/
pu
ls
e
]
Collector current : Ic [ A ]
10
100
300
0
10
20
30
40
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
Vcc=300V, Ic=150A, VGE=+-15V, Tj= 125C
S
w
itc
hi
ng
lo
ss
:
E
on
,E
of
f,
E
rr
[m
J/
pu
ls
e
]
Gate resistance : Rg [ ohm ]
Eon
Err
Eoff
0
200
400
600
800
0
100
200
300
400
[ Inverter ]
Reverse bias safe operating area
+VGE=15V, -VGE<=15V, Rg>=24ohm, Tj<=125C
Collector - Emitter voltage : VCE [ V ]
C
ol
le
ct
or
cu
rr
en
t
:I
c
[A
]
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