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參數(shù)資料
| 型號： | 4MBI150T-060 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT Module |
| 中文描述： | 600 V, N-CHANNEL IGBT |
| 封裝： | MODULE-24 |
| 文件頁數(shù)： | 9/14頁 |
| 文件大?。?/td> | 631K |
| 代理商： | 4MBI150T-060 |
H04-004-03
14
MS5F 05550
4
3. Absolute Maximum Ratings ( at Tc= 25℃ unless otherwise specified ）
Items
Symbols
Conditions
Maximum
Ratings
Units
Collector-Emitter voltage
VCES
Ic=1mA
600
V
Gate-Emitter voltage
VGES
±20
V
Ic
Duty=100 %
150
Collector current
Ic pulse
1ms
300
A
IF
Duty=60 %
150
IF pulse
1ms
300
Collector Power Dissipation
Pc
430
W
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-40~ +125
℃
Isolation voltage(*1)
Viso
AC : 1min.
2500
V
Screw Torque
Mounting(*2)
3.5
N m
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : Mounting 2.5~3.5 N m (M5)
4. Electrical characteristics ( at Tj= 25℃ unless otherwise specified)
Characteristics
min.
typ.
Max.
Zero gate voltage
Collector current
ICES
VGE =
0 V, VCE =
600 V
-
1.0
mA
Gate-Emitter leakage current
IGES
VCE =
0 V, VGE =
±20 V
-
200
nA
Gate-Emitter
threshold voltage
VGE(th) VCE =
20 V, Ic =
150 mA
6.2
6.7
7.7
V
VCE(sat)
Tj = 25℃
-
2.25
2.60
Collector-Emitter
(Terminal)
VGE =
15 V
Tj = 125℃
-
2.5
-
saturation voltage
VCE(sat) Ic =
150 A
Tj = 25℃
-
1.85
-
(Chip)
Tj = 125℃
-
2.1
-
Input capacitance
Cies
VGE =
0 V
-
11500
-
Output capacitance
Coes
VCE =
10 V
-
2050
-
pF
Reverse transfer capacitance
Cres
f =
1 MHz
-
1700
-
ton
Vcc =
300 V
-
0.4
1.2
Turn-on time
tr
Ic =
150 A
-
0.2
0.6
tr(i)
VGE =
±15 V
-
0.1
-
μs
Turn-off time
toff
RG =
24
-
0.5
1.2
tf
-
0.05
0.45
VF
Tj = 25℃
-
2.2
2.65
Forward on voltage
(Terminal) IF =
150 A
Tj = 125℃
-
2.1
-
VF
Tj = 25℃
-
1.8
-
(Chip)
Tj = 125℃
-
1.7
-
Reverse recovery time
trr
IF =
150 A
-
0.35
μs
Allowable avalance energy
during short curcuit cuting off
(Non-repetitive)
PAV
Ic > 400A, Tj = 125℃
85
-
mJ
T = 25℃
-
5000
-
T = 100℃
465
495
520
B value
B
T = 25/50℃
3305
3375
3450
K
5. Thermal resistance characteristics
Characteristics
min.
typ.
Max.
Thermal resistance
IGBT
-
0.29
(1 device)
FWD
-
0.64 ℃/Ｗ
Contact Thermal resistance (1 device)
Rth(c-f) With thermal compound *
-
0.05
-
* This is the value which is defined mounting on the additional cooling fin with thermal compound.
Rth(j-c)
1 device
In
ve
rt
e
r
T
h
e
rm
is
ito
r
Items
Conditions
Resistance
Units
V
Symbols
Conditions
R
Units
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