參數(shù)資料
型號(hào): 4MBI200T-060
廠商: FUJI ELECTRIC CO LTD
元件分類: IGBT 晶體管
英文描述: IGBT Module
中文描述: 200 A, 600 V, N-CHANNEL IGBT
封裝: MODULE-24
文件頁(yè)數(shù): 2/14頁(yè)
文件大?。?/td> 643K
代理商: 4MBI200T-060
H04-004-03
14
MS5F 05498
10
0
1
2
3
4
5
0
100
200
300
400
500
8V
10V
12V
15V
VGE= 20V
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 25C (typ.)
C
ol
le
ct
or
cu
rr
en
t
:
Ic
[A
]
Collector - Emitter voltage : VCE [ V ]
0
1
2
3
4
5
0
100
200
300
400
500
8V
10V
12V
15V
VGE= 20V
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Tj= 125C (typ.)
Collector - Emitter voltage : VCE [ V ]
C
ol
le
ct
or
cu
rr
en
t
:
Ic
[A
]
0
1
2
3
4
5
0
100
200
300
400
500
Tj= 25C Tj= 125C
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Collector - Emitter voltage : VCE [ V ]
C
ol
le
ct
or
cu
rr
en
t
:
Ic
[A
]
5
10
15
20
25
0
2
4
6
8
10
12
Ic=100A
Ic=200A
Ic=400A
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25C (typ.)
C
ol
le
ct
or
-
E
m
itt
er
vo
lta
ge
:
V
C
E
[V
]
Gate - Emitter voltage : VGE [ V ]
0
5
10
15
20
25
30
35
500
1000
5000
10000
50000
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25C
C
ap
ac
ita
nc
e
:
C
ie
s,
C
oe
s,
C
re
s
[p
F
]
Collector - Emitter voltage : VCE [ V ]
Coes
Cres
Cies
0
100
200
300
400
500
600
700
800
0
100
200
300
400
500
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=300V, Ic=200A, Tj= 25C
Gate charge : Qg [ nC ]
C
ol
le
ct
or
-
E
m
itt
er
vo
lta
ge
:
V
C
E
[V
]
0
5
10
15
20
25
G
at
e
-
E
m
itt
er
vo
lta
ge
:
V
G
E
[V
]
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