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參數(shù)資料
| 型號(hào)： | 4MBI75T-060 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT Module |
| 中文描述： | 600 V, N-CHANNEL IGBT |
| 封裝： | MODULE-24 |
| 文件頁數(shù)： | 3/14頁 |
| 文件大?。?/td> | 623K |
| 代理商： | 4MBI75T-060 |
H04-004-03
14
MS5F 5432
a
b
c
11
0
50
100
150
10
100
1000
ton
tr
toff
tf
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=+-15V, Rg=51ohm, Tj= 25C
S
w
itc
hi
ng
tim
e
:
to
n,
tr
,t
of
f,
tf
[n
se
c
]
Collector current : Ic [ A ]
0
50
100
150
10
100
1000
tf
tr
ton
toff
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=+-15V, Rg= 51ohm, Tj= 125C
Collector current : Ic [ A ]
S
w
itc
hi
ng
tim
e
:
to
n,
tr
,t
of
f,
tf
[n
se
c
]
10
100
200
10
100
1000
5000
toff
ton
tr
tf
[ Inverter ]
Switching time vs. Gate resistance (typ.)
Vcc=300V, Ic=75A, VGE=+-15V, Tj= 25C
Gate resistance : Rg [ ohm ]
S
w
itc
hi
ng
tim
e
:
to
n,
tr
,t
of
f,
tf
[n
se
c
]
0
50
100
150
0
2
4
6
8
Err(25C)
Eoff(25C)
Eon(25C)
Err(125C)
Eoff(125C)
Eon(125C)
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=300V, VGE=+-15V, Rg=51ohm
S
w
itc
hi
ng
lo
ss
:
E
on
,E
of
f,
E
rr
[m
J/
pu
ls
e
]
Collector current : Ic [ A ]
50
100
500
0
5
10
15
20
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
Vcc=300V, Ic=75A, VGE=+-15V, Tj= 125C
S
w
itc
hi
ng
lo
ss
:
E
on
,E
of
f,
E
rr
[m
J/
pu
ls
e
]
Gate resistance : Rg [ ohm ]
Eon
Err
Eoff
0
200
400
600
800
0
50
100
150
200
[ Inverter ]
Reverse bias safe operating area
+VGE=15V, -VGE<=15V, Rg>=51ohm, Tj<=125C
Collector - Emitter voltage : VCE [ V ]
C
ol
le
ct
or
cu
rr
en
t
:I
c
[A
]
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