- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33834 > 4MBI75T-060 (FUJI ELECTRIC CO LTD) IGBT Module PDF資料下載
參數(shù)資料
| 型號： | 4MBI75T-060 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT Module |
| 中文描述： | 600 V, N-CHANNEL IGBT |
| 封裝： | MODULE-24 |
| 文件頁數(shù)： | 9/14頁 |
| 文件大?。?/td> | 623K |
| 代理商： | 4MBI75T-060 |
H04-004-03
14
MS5F 5432
a
b
c
3.
Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified ）
Symbols
Conditions
Maximum
Ratings
Units
VCES
Ic=1mA
600
V
VGES
±20
V
Ic
Duty=100 %
75
Ic pulse
1ms
150
A
IF
Duty=50 %
75
IF pulse
1ms
150
Pc
178
W
Tj
150
°C
Tstg
-40~ +125
°C
between terminal and copper base *1
between thermistor and others *2
Mounting
*3
-
3.5
N m
(*1) All terminals should be connected together when isolation test will be done.
(*2) Two thermistor terminals should be connected together, each other terminals should be connected together
and shorted to base plate when isolation test will be done.
(*3) Recommendable Value : Mounting 2.5~3.5 N m (M5)
4. Electrical characteristics ( at Tj= 25°Cunless otherwise specified)
Characteristics
Symbols
Conditions
min.
typ.
Max. Units
ICES
VGE
0 V, VCE = 600 V
-
1.0
mA
IGES
VCE
0 V, VGE = ±20 V
-
200
nA
VGE(th) VCE
20 V, Ic =
75 mA
6.2
6.7
7.7
V
VGE
15 V
Chip
-
2.0
2.3
V
Ic =
75 A
Terminal
-
2.3
2.6
Input capacitance
Cies
VGE =
0 V
-
5500
-
Output capacitance
Coes
VCE
10 V
-
1000
-
pF
Reverse transfer capacitance
Cres
f =
1 MHz
-
850
-
ton
Vcc = 300 V
-
0.4
1.2
tr
Ic =
75 A
-
0.25
0.6
tr(i)
VGE ±15 V
-
0.1
-
μ
s
toff
RG = 51 Ω
-
0.4
1.2
tf
-
0.04
0.45
IF =
75 A
Chip
-
2.1
2.5
Terminal
-
2.4
2.8
Reverse recovery time
trr
IF =
75 A
-
0.3
μ
s
Allowabe avalanche energy
during short circuit cutting off
PAV
Ic > 150A ,Tj = 125°C
30
-
mJ
-
5000
-
465
495
520
B
3305
3375
3450
K
5. Thermal resistance characteristics
Characteristics
min.
typ.
Max.
Rth(j-c) IGBT
-
0.70
FWD
-
1.66 °C/W
Rth(c-f) With thermal compound *
-
0.05
-
* This is the value which is defined mounting on the additional cooling fin
with thermal compound.
Thermal resistance (1 device)
Contact Thermal resistance (1 device)
Items
B value
Items
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
T = 25°C
Items
Screw
Torque
VCE(sat)
Resistance
R
VF
(Non-repetitive)
Forward on voltage
Zero gate voltage
Collector current
V
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation
voltage
Gate-Emitter leakage current
Gate-Emitter
threshold voltage
V
1 device
Viso
AC : 1min.
2500
Collector-Emitter
Conditions
Units
saturation voltage
Turn-on time
Turn-off time
Symbols
T =100°C
T = 25/50°C
Ω
In
ve
rt
e
r
T
h
e
rm
is
to
r
4
a
b
c
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 4MBP100RA060 | IGBT-IPM |
| 4MBP75RA060 | IGBT-IPM |
| 4N25.300 | GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
| 4N25.300W | GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
| 4N25.3S | GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 4MBM12-5-2C | 制造商:TURCK Inc 功能描述:4MBM12-5-2C |
| 4MBM12-5N3-5C | 制造商:TURCK Inc 功能描述:Distribution Box, 4 x M12 Ports, 5 Wire, 10-48VDC, 5m, PVC, Yellow, U0925-48 |
| 4MBM8-4P2-7/8-M | 制造商:TURCK Inc 功能描述:Distribution Box, M8, Piconet, 4 x M8 I/O Conn, 1 x 7/8" Bus, M8017217 |
| 4MB-P | 制造商:Thomas & Betts 功能描述:4MB WITH PIGTAIL INSTALLED |
| 4MBP100RA060 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT-IPM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。