參數(shù)資料
型號(hào)： 4N35GV
廠商： Vishay Intertechnology,Inc.
英文描述： Optocoupler with Phototransistor Output
中文描述： 與光電晶體管光電耦合器輸出
文件頁(yè)數(shù)： 2/9頁(yè)
文件大小： 147K
代理商： 4N35GV
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Rev. A4, 11–Jan–99
87
Features
Approvals:
D BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
D FIMKO (SETI): EN 60950,
Certificate number 12399
D Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
D VDE 0884, Certificate number 94778
VDE 0884 related features:
D Rated impulse voltage (transient overvoltage)
VIOTM = 6 kV peak
D Isolation test voltage
(partial discharge test voltage) Vpd = 1.6 kV
D Rated isolation voltage (RMS includes DC)
VIOWM = 600 VRMS (848 V peak)
D Rated recurring peak voltage (repetitive)
VIORM = 600 VRMS
D Creepage current resistance according to
VDE 0303/IEC 112
Comparative Tracking Index: CTI = 275
D Thickness through insulation ≥ 0.75 mm
General features:
D Isolation materials according to UL94-VO
D Pollution degree 2
(DIN/VDE 0110 part 1 resp. IEC 664)
D Climatic classification 55/100/21 (IEC 68 part 1)
D Special construction:
Therefore, extra low coupling capacity of
typical 0.2 pF, high Common Mode Rejection
D Low temperature coefficient of CTR
D Coupling System A
Absolute Maximum Ratings
Input (Emitter)
Parameter
Test Conditions
Symbol
Value
Unit
Reverse voltage
VR
5
V
Forward current
IF
60
mA
Forward surge current
tp ≤ 10 ms
IFSM
3
A
Power dissipation
Tamb ≤ 25°C
PV
100
mW
Junction temperature
Tj
125
°C
Output (Detector)
Parameter
Test Conditions
Symbol
Value
Unit
Collector emitter voltage
VCEO
32
V
Emitter collector voltage
VCEO
7
V
Collector current
IC
50
mA
Collector peak current
tp/T = 0.5, tp ≤ 10 ms
ICM
100
mA
Power dissipation
Tamb ≤ 25°C
PV
150
mW
Junction temperature
Tj
125
°C
Coupler
Parameter
Test Conditions
Symbol
Value
Unit
Isolation test voltage (RMS)
t = 1 min
VIO
3.75
kV
Total power dissipation
Tamb ≤ 25°C
Ptot
250
mW
Ambient temperature range
Tamb
–55 to +100
°C
Storage temperature range
Tstg
–55 to +125
°C
Soldering temperature
2 mm from case, t
≤ 10 s
Tsd
260
°C
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參數(shù)描述
4N35GVS 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN-OUTPUT DC-INPUT OPTOCOUPLER
4N35GVSERIES 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Optocoupler with Phototransistor Output
4N35M 功能描述:晶體管輸出光電耦合器 Optocoupler Phototransistor RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk
4N35-M 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER PHOTOTRANSISTOR 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER TRANSISTOR O/P 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER, TRANSISTOR O/P 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLERPHOTOTRANSISTOR 7.5KV 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER, PHOTOTRANSISTOR, 7.5KV; No. of Channels:1; Isolation Voltage:7.5kV; Optocoupler Output Type:Phototransistor; Input Current:10mA; Output Voltage:30V; Opto Case Style:DIP; No. of Pins:6
4N35-M 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER TRANSISTOR O/P
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