參數(shù)資料
型號: 4N35GV
廠商: Vishay Intertechnology,Inc.
英文描述: Optocoupler with Phototransistor Output
中文描述: 與光電晶體管光電耦合器輸出
文件頁數(shù): 6/9頁
文件大?。?/td> 147K
代理商: 4N35GV
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Rev. A4, 11–Jan–99
91
Typical Characteristics (Tamb = 25_C, unless otherwise specified)
0
50
100
150
200
250
300
0
40
80
120
P
T
otal
Power
Dissipation
(
mW
)
Tamb – Ambient Temperature (
°C)
96 11700
tot
Coupled device
Phototransistor
IR-diode
Figure 6. Total Power Dissipation vs.
Ambient Temperature
0.1
1.0
10.0
100.0
1000.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF – Forward Voltage ( V )
96 11862
F
I
Forward
Current
(
mA
)
Figure 7. Forward Current vs. Forward Voltage
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
–30 –20 –10 0
10 20 30 40 50 60 70 80
Tamb – Ambient Temperature ( °C
)
96 11874
CTR
Relative
Current
T
ransfer
Ratio
rel
VCE=10V
IF=10mA
Figure 8. Relative Current Transfer Ratio vs.
Ambient Temperature
1
10
100
1000
10000
0
102030 405060 708090 100
Tamb – Ambient Temperature ( °C
)
96 11875
I
Collector
Dark
Current,
CEO
with
open
Base
(
nA
)
VCE=10V
IF=0
Figure 9. Collector Dark Current vs.
Ambient Temperature
0.001
0.010
0.100
1.000
1
10
100
IF – Forward Current ( mA )
96 11876
I
Collector
Base
Current
(
mA
)
CB
VCB=10V
Figure 10. Collector Base Current vs. Forward Current
0.01
0.10
1.00
10.00
100.00
0.1
1.0
10.0
100.0
IF – Forward Current ( mA )
96 11904
VCE=10V
I
Collector
Current
(
mA
)
C
Figure 11. Collector Current vs. Forward Current
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