- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33842 > 4N38SR2M (FAIRCHILD SEMICONDUCTOR CORP) 6-pin DIP High Voltage Phototransistor Output Optocoupler; Package: SMDIP-W; No of Pins: 6; Container: Tape & Reel PDF資料下載
參數(shù)資料
| 型號： | 4N38SR2M |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 光電耦合器 |
| 英文描述： | 6-pin DIP High Voltage Phototransistor Output Optocoupler; Package: SMDIP-W; No of Pins: 6; Container: Tape & Reel |
| 中文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封裝： | SURFACE MOUNT, DIP-6 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 243K |
| 代理商： | 4N38SR2M |
2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6
3
4N38M,
H11D1
M,
H11D2M,
H11D3M,
MOC8204M
—
High
V
olta
g
e
Phototransistor
Optocoupler
s
Electrical Characteristics (T
A = 25°C unless otherwise specified.)
Individual Component Characteristics
Transfer Characteristics (TA = 25°C Unless otherwise specied.)
*All Typical values at TA = 25°C
Note:
2. Parameters meet or exceed JEDEC registered data (for 4N38M only).
Symbol
Characteristic
Test Conditions
Device
Min.
Typ.*
Max.
Unit
EMITTER
VF
Forward Voltage(2)
IF = 10mA
All
1.15
1.5
V
F
T
A
Forward Voltage
Temp. Coefcient
All
-1.8
mV/°C
BVR
Reverse Breakdown
Voltage
IR = 10A
All
6
25
V
CJ
Junction Capacitance
VF = 0V, f = 1MHz
All
50
pF
VF = 1V, f = 1MHz
65
pF
IR
Reverse Leakage
Current(2)
VR = 6V
All
0.05
10
A
DETECTOR
BVCER
Breakdown Voltage
Collector to Emitter(2)
RBE = 1M, IC = 1.0mA, IF = 0
MOC8204M
400
V
H11D1M/2M
300
H11D3M
200
BVCEO
No RBE, IC = 1.0mA
4N38M
80
BVCBO
Collector to Base(2)
IC = 100A, IF = 0
MOC8204M
400
V
H11D1M/2M
300
H11D3M
200
4N38M
80
BVEBO
Emitter to Base
IE = 100A, IF = 0
4N38M
7
V
BVECO
Emitter to Collector
IE = 100A, IF = 0
All
7
10
V
ICER
Leakage Current
Collector to Emitter(2)
(RBE = 1M)
VCE = 300V, IF = 0, TA = 25°C
MOC8204M
100
nA
VCE = 300V, IF = 0, TA = 100°C
250
A
VCE = 200V, IF = 0, TA = 25°C
H11D1M/2M
100
nA
VCE = 200V, IF = 0, TA = 100°C
250
A
VCE = 100V, IF = 0, TA = 25°C
H11D3M
100
nA
VCE = 100V, IF = 0, TA = 100°C
250
A
ICEO
No RBE, VCE = 60V, IF = 0,
TA = 25°C
4N38M
50
nA
Symbol
Characteristics
Test Conditions
Device
Min.
Typ.*
Max.
Units
EMITTER
CTR
Current Transfer
Ratio, Collector to
Emitter
IF = 10mA, VCE = 10V,
RBE = 1M
H11D1M/2M/3M,
MOC8204M
2 (20)
mA (%)
IF = 10mA, VCE = 10V
4N38M
2 (20)
VCE(SAT)
Saturation Voltage(2)
IF = 10mA, IC = 0.5mA,
RBE = 1M
H11D1M/2M/3M,
MOC8204M
0.1
0.40
V
IF = 20mA, IC = 4mA
4N38M
1.0
SWITCHING TIMES
tON
Non-Saturated
Turn-on Time
VCE = 10V, ICE = 2mA,
RL = 100
All
5
s
tOFF
Turn-off Time
All
5
s
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 4N38TM | 6-pin DIP High Voltage Phototransistor Output Optocoupler; Package: DIP-W; No of Pins: 6; Container: Bulk |
| 4N38VM | 6-pin DIP High Voltage Phototransistor Output Optocoupler; Package: DIP-W; No of Pins: 6; Container: Bulk |
| 4N38SVM | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 4N38TVM | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 4N38 | Photocoupler(GaAs LED& Phototransistor)(光耦（包括GaAs LED和光晶體管）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 4N38SR2VM | 制造商:Fairchild Semiconductor Corporation 功能描述:HIGH VOLTAGE, SURFACE MOUNT LEAD BEND, VDE, T&R - Tape and Reel |
| 4N38STA-V | 制造商:EVERLIGHT 制造商全稱:Everlight Electronics Co., Ltd 功能描述:6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
| 4N38STB-V | 制造商:EVERLIGHT 制造商全稱:Everlight Electronics Co., Ltd 功能描述:6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER |
| 4N38SVM | 制造商:Fairchild Semiconductor Corporation 功能描述:HIGH VOLTAGE, SURFACE MOUNT LEAD BEND, VDE - Bulk |
| 4N38TM | 制造商:Fairchild Semiconductor Corporation 功能描述:HIGH VOLTAGE TRANS OUTPUT, 0.4 INCH LEAD BEND - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復。