參數(shù)資料
型號(hào): 4N38SR2M
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 光電耦合器
英文描述: 6-pin DIP High Voltage Phototransistor Output Optocoupler; Package: SMDIP-W; No of Pins: 6; Container: Tape & Reel
中文描述: 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
封裝: SURFACE MOUNT, DIP-6
文件頁數(shù): 4/9頁
文件大小: 243K
代理商: 4N38SR2M
2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6
4
4N38M,
H11D1
M,
H11D2M,
H11D3M,
MOC8204M
High
V
olta
g
e
Phototransistor
Optocoupler
s
DC Electrical Characteristics (Continued) (T
A = 25°C unless otherwise specified.)
Isolation Characteristics
*All Typical values at TA = 25°C
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Characteristic
Test Conditions
Device
Min.
Typ.*
Max.
Units
VISO
Isolation Voltage
f = 60Hz, t = 1 sec.
All
7500
VACPEAK
RISO
Isolation Resistance
VI-O = 500 VDC
All
1011
CISO
Isolation Capacitance
f = 1MHz
All
0.2
pF
Symbol
Parameter
Min.
Typ.
Max.
Unit
Installation Classications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms
I-IV
For Rated Main voltage < 300Vrms
I-IV
Climatic Classication
55/100/21
Pollution Degree (DIN VDE 0110/1.89)
2
CTI
Comparative Tracking Index
175
VPR
Input to Output Test Voltage, Method b,
VIORM x 1.875 = VPR, 100% Production Test
with tm = 1 sec, Partial Discharge < 5pC
1594
Vpeak
Input to Output Test Voltage, Method a,
VIORM x 1.5 = VPR, Type and Sample Test
with tm = 60 sec, Partial Discharge < 5pC
1275
Vpeak
VIORM
Max. Working Insulation Voltage
850
Vpeak
VIOTM
Highest Allowable Over Voltage
6000
Vpeak
External Creepage
7
mm
External Clearance
7
mm
Insulation Thickness
0.5
mm
RIO
Insulation Resistance at Ts, VIO = 500V
109
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