參數(shù)資料
型號: 5962-8760401GA
廠商: NATIONAL SEMICONDUCTOR CORP
元件分類: 運算放大器
英文描述: OP-AMP, 3000 uV OFFSET-MAX, MBCY8
封裝: METAL CAN, 8 PIN
文件頁數(shù): 12/25頁
文件大?。?/td> 762K
代理商: 5962-8760401GA
Absolute Maximum Ratings (Notes 1, 8)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
LM10/LM10B/ LM10BL/
LM10C
LM10CL
Total Supply Voltage
45V
7V
Differential Input Voltage (Note 2)
±40V
±7V
Power Dissipation (Note 3)
internally limited
Output Short-circuit Duration (Note 4)
continuous
Storage-Temp. Range
55C to +150C
Lead Temp. (Soldering, 10 seconds)
Metal Can
300C
Lead Temp. (Soldering, 10 seconds) DIP
260C
Vapor Phase (60 seconds)
215C
Infrared (15 seconds)
220C
See AN-450 “Surface Mounting Methods and Their Effect on
Product Reliability” for other methods of soldering surface
mount devices.
ESD rating is to be determined.
Maximum Junction Temperature
LM10
150C
LM10B
100C
LM10C
85C
Operating Ratings
Package Thermal Resistance
θ
JA
H Package
150C/W
N Package
87C/W
WM Package
90C/W
θ
JC
H Package
45C/W
Electrical Characteristics
T
J=25C, TMIN≤TJ≤TMAX (Boldface type refers to limits over temperature range) (Note 5)
Parameter
Conditions
LM10/LM10B
LM10C
Units
Min
Typ
Max
Min
Typ
Max
Input offset voltage
0.3
2.0
0.5
4.0
mV
3.0
5.0
mV
Input offset current
0.25
0.7
0.4
2.0
nA
(Note 6)
1.5
3.0
nA
Input bias current
10
20
12
30
nA
30
40
nA
Input resistance
250
500
150
400
k
150
115
k
Large signal voltage
V
S= ±20V, IOUT=0
120
400
80
400
V/mV
gain
V
OUT= ±19.95V
80
50
V/mV
V
S= ±20V, VOUT= ±19.4V
50
130
25
130
V/mV
I
OUT= ±20 mA (±15 mA)
20
15
V/mV
V
S= ±0.6V (0.65V), IOUT= ±2 mA
1.5
3.0
1.0
3.0
V/mV
V
OUT= ±0.4V (±0.3V), VCM=0.4V
0.5
0.75
V/mV
Shunt gain (Note 7)
1.2V (1.3V)
≤V
OUT≤40V,
14
33
10
33
V/mV
R
L=1.1 k
0.1 mA
≤I
OUT≤5mA
66
V/mV
1.5V
≤V+≤40V, R
L=250
8
25
6
25
V/mV
0.1 mA
≤I
OUT≤20 mA
44
V/mV
Common-mode
20V
≤V
CM≤19.15V (19V)
93
102
90
102
dB
rejection
V
S= ±20V
87
dB
Supply-voltage
0.2V
≥V≥39V
90
96
87
96
dB
rejection
V
+=1.0V (1.1V)
84
dB
1.0V (1.1V)
≤V+≤39.8V
96
106
93
106
dB
V
=0.2V
90
dB
Offset voltage drift
2.0
5.0
V/C
Offset current drift
2.0
5.0
pA/C
Bias current drift
T
C<100C
60
90
pA/C
Line regulation
1.2V (1.3V)
≤V
S≤40V
0.001
0.003
0.001
0.008
%/V
0
≤I
REF≤1.0 mA, VREF=200 mV
0.006
0.01
%/V
LM10
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