TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9
LinCMOS
PRECISION QUAD OPERATIONAL AMPLIFIERS
SLOS093C – OCTOBER 1987 – REVISED MAY 1999
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
description (continued)
Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC27M4 (10
mV) to the high-precision TLC27M9 (900
V). These advantages, in combination with good common-mode
rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as
well as for upgrading existing designs.
In general, many features associated with bipolar technology are available on LinCMOS
operational
amplifiers, without the power penalties of bipolar technology. General applications such as transducer
interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are easily designed with the
TLC27M4 and TLC27M9. The devices also exhibit low voltage single-supply operation, and low power
consumption, making them ideally suited for remote and inaccessible battery-powered applications. The
common-mode input voltage range includes the negative rail.
A wide range of packaging options is available, including small-outline and chip-carrier versions for high-density
system applications.
The device inputs and outputs are designed to withstand – 100-mA surge currents without sustaining latch-up.
The TLC27M4 and TLC27M9 incorporate internal ESD-protection circuits that prevent functional failures at
voltages up to 2000 V as tested under MIL-STD-883C, Method 3015; however, care should be exercised in
handling these devices, as exposure to ESD may result in the degradation of the device parametric
performance.
The C-suffix devices are characterized for operation from 0
°C to 70°C. The I-suffix devices are characterized
for operation from – 40
°C to 85°C. The M-suffix devices are characterized for operation over the full military
temperature range of – 55
°C to 125°C.
AVAILABLE OPTIONS
PACKAGE
CHIP
TA
VIOmax
AT 25
°C
SMALL
OUTLINE
(D)
CHIP
CARRIER
(FK)
CERAMIC
DIP
(J)
PLASTIC
DIP
(N)
TSSOP
(PW)
CHIP
FORM
(Y)
900
V
TLC27M9CD
—
TLC27M9CN
—
0
°Cto70°C
2 mV
TLC27M4BCD
—
TLC27M4BCN
—
0
°C to 70°C
5 mV
TLC27M4ACD
—
TLC27M4ACN
—
10 mV
TLC27M4CD
—
TLC27M4CN
TLC27M4CPW
TLC27M4Y
900
V
TLC27M9ID
—
TLC27M9IN
—
40
°Cto85°C
2 mV
TLC27M4BID
—
TLC27M4BIN
—
– 40
°C to 85°C
5 mV
TLC27M4AID
—
TLC27M4AIN
—
10 mV
TLC27M4ID
—
TLC27M4IN
TLC27M41PW
—
55
°Cto125°C
900
V
TLC27M9MD
TLC27M9MFK
TLC27M9MJ
TLC27M9MN
—
– 55
°C to 125°C
10 mV
TLC27M4MD
TLC27M4MFK
TLC27M4MJ
TLC27M4MN
—
The D and PW package is available taped and reeled. Add R suffix to the device type (e.g., TLC279CDR).