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參數(shù)資料
| 型號(hào)： | 5962-90702MPA |
| 廠商： | VISHAY SILICONIX |
| 元件分類： | 多路復(fù)用及模擬開關(guān) |
| 英文描述： | 1-CHANNEL, SGL POLE SGL THROW SWITCH, CDIP8 |
| 封裝： | CERDIP-8 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 132K |
| 代理商： | 5962-90702MPA |
DG417/418/419
Vishay Siliconix
www.vishay.com
S FaxBack 408-970-5600
4-10
Document Number: 70051
S-52433—Rev. E, 06-Sep-99
"
APPLICATIONS (CONT'D)
Micropower UPS Transfer Switch
When VCC drops to 3.3 V, the DG417 changes states, closing
SW1 and connecting the backup cell, as shown in Figure 11.
D1 prevents current from leaking back towards the rest of the
circuit. Current consumption by the CMOS analog switch is
around 100 pA; this ensures that most of the power available
is applied to the memory, where it is really needed. In the
stand-by mode, hundreds of
mA are sufficient to retain memory
data.
When the 5-V supply comes back up, the resistor divider
senses the presence of at least 3.5 V, and causes a new
change of state in the analog switch, restoring normal
operation.
Programmable Gain Amplifier
The DG419, as shown in Figure 12, allows accurate gain
selection in a small package. Switching into virtual ground
reduces distortion caused by rDS(on) variation as a function of
analog signal amplitude.
GaAs FET Driver
The DG419, as shown in Figure 13 may be used as a GaAs
FET driver. It translates a TTL control signal into –8-V, 0-V level
outputs to drive the gate.
GND
IN
D
V–
3 V Li Cell
Memory
DG417
(5 V)
V+
S
+
–
SW1
VL
VSENSE
R1
453 k
W
D1
VCC
FIGURE 11. Micropower UPS Circuit
R2
383 k
W
DG419
+
–
IN
R1
R2
VIN
VOUT
FIGURE 12. Programmable Gain Amplifier
D
S1
S2
DG419
5 V
VOUT
D
V–
GND
S2
S1
VL
V+
+5 V
–8 V
GaAs FET
FIGURE 13. GaAs FET Driver
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| 5962-9071101M2C | 功能描述:監(jiān)控電路 RoHS:否 制造商:STMicroelectronics 監(jiān)測(cè)電壓數(shù): 監(jiān)測(cè)電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
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