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參數(shù)資料
| 型號： | 5962-9960701TUX |
| 元件分類： | SRAM |
| 英文描述： | 512K X 8 STANDARD SRAM, 25 ns, CDFP36 |
| 封裝： | BOTTOM BRAZED, CERAMIC, DFP-36 |
| 文件頁數(shù)： | 1/15頁 |
| 文件大小： | 121K |
| 代理商： | 5962-9960701TUX |
FEATURES
q 20ns (3.3 volt supply) maximum address access time
q Asynchronous operation for compatibility with industry-
standard 512K x 8 SRAMs
q TTL compatible inputs and output levels, three-state
bidirectional data bus
q Typical radiation performance
- Total dose: 50krads
- >100krads(Si), for any orbit, using Aeroflex UTMC
patented shielded package
- SEL Immune >80 MeV-cm
2 /mg
- LETTH(0.25) = >10 MeV-cm
2/mg
- Saturated Cross Section cm2 per bit, 5.0E-9
- <1E-8 errors/bit-day, Adams 90% geosynchronous
heavy ion
q Packaging options:
- 36-lead ceramic flatpack (3.42 grams)
- 36-lead flatpack shielded (10.77 grams)
q Standard Microcircuit Drawing 5962-99607
- QML T and Q compliant
INTRODUCTION
The QCOTSTM UT8Q512 Quantified Commercial Off-the-
Shelf product is a high-performance CMOS static RAM
organized as 524,288 words by 8 bits. Easy memory
expansion is provided by an active LOW Chip Enable (E),
an active LOW Output Enable (G), and three-state drivers.
This device has a power-down feature that reduces power
consumption by more than 90% when deselected
.
Writing to the devicei s accomplished by taking Chip Enable
one (E) input LOW and Write Enable (W) inputs LOW.
Data on the eight I/O pins (DQ0 through DQ7) is then written
into the location specified on the address pins (A0 through
A
18 ). Reading from the device is accomplished by taking
Chip Enable one (E) and Output Enable (G) LOW while
forcing Write Enable (W) HIGH. Under these conditions,
the contents of the memory location specified by the address
pins will appear on the I/O pins.
The eight input/output pins (DQ
0 through DQ 7) are placed
in a high impedance state when the device is deselected (E,
HIGH), the outputs are disabled (G HIGH), or during a write
operation (E LOWand W LOW).
Standard Products
QCOTS
TM UT8Q512 512K x 8 SRAM
Data Sheet
November 13, 2002
Memory Array
1024 Rows
512x8 Columns
Pre-Charge Circuit
Clk. Gen.
R
o
w
S
e
le
c
t
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
I/O Circuit
Column Select
Data
Control
CLK
Gen.
A
1
0
A
11
A
1
2
A
1
3
A
1
4
A
1
5
A
1
6
A
1
7
A
1
8
DQ
0 - DQ7
W
G
E
Figure 1. UT8Q512 SRAM Block Diagram
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