參數(shù)資料
型號(hào)： 5962-9960701TUX
元件分類： SRAM
英文描述： 512K X 8 STANDARD SRAM, 25 ns, CDFP36
封裝： BOTTOM BRAZED, CERAMIC, DFP-36
文件頁(yè)數(shù)： 12/15頁(yè)
文件大?。?/td> 121K
代理商： 5962-9960701TUX
6
AC CHARACTERISTICS READ CYCLE (Pre/Post-Radiation)*
(-55
°C to +125°C for (C) screening and -40oC to +125oC for (W) screening) (V
DD = 3.3V + 0.3)
Notes: * Post-radiation performance guaranteed at 25
°C per MIL-STD-883 Method 1019.
1. Functional test.
2. Three-state is defined as a 30 0mV change from steady-state output voltage (see Figure 3).
3. The ET (enable true) notation refers to the falling edge of E. SEU immunity does not affect the read parameters.
4. The EF (enable false) notation refers to the rising edge ofE. SEU immunity does not affect the read parameters.
SYMBOL
PARAMETER
MIN
MAX
UNIT
tAVAV
1
Read cycle time
20
ns
tAVQV
Read access time
25
ns
tAXQX
Output hold time
3
ns
t
GLQX
G-controlled Output Enable time
0
ns
tGLQV
G-controlled Output Enable time (Read Cycle 3)
10
ns
t
GHQZ
2
G-controlled output three-state time
10
ns
tETQX
3
E-controlled Output Enable time
3
ns
tETQV
3
E-controlled access time
25
ns
t
EFQZ
1,2,4
E-controlled output three-state time
10
ns
{
}
VLOAD + 300mV
VLOAD - 300mV
VLOAD
VH - 300mV
VL + 300mV
Active to High Z Levels
High Z to Active Levels
Figure 3. 3-Volt SRAM Loading
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