- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄91742 > 5SLD0650J450300 (ABB SWITZERLAND LTD SEMICONDUCTORS) 650 A, 4500 V, SILICON, RECTIFIER DIODE PDF資料下載
參數(shù)資料
| 型號(hào)： | 5SLD0650J450300 |
| 廠商： | ABB SWITZERLAND LTD SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 650 A, 4500 V, SILICON, RECTIFIER DIODE |
| 封裝： | HIPAK-4 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 192K |
| 代理商： | 5SLD0650J450300 |
5SLD 0650J450300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1599-02 Jan 09
page 2 of 5
Diode characteristic values 2)
Parameter
Symbol
Conditions
min
typ
max
Unit
Tvj = 25 °C
3.1
Forward voltage 3)
VF
IF = 650 A
Tvj = 125 °C
3.4
V
Tvj = 25 °C
10
Continuous reverse current
IR
VR = 4500 V
Tvj = 125 °C
16
32
mA
Tvj = 25 °C
830
Reverse recovery current
Irr
Tvj = 125 °C
930
A
Tvj = 25 °C
560
Recovered charge
Qrr
Tvj = 125 °C
930
C
Tvj = 25 °C
1180
Reverse recovery time
trr
Tvj = 125 °C
1700
ns
Tvj = 25 °C
910
Reverse recovery energy
Erec
VR = 2800 V,
IF = 650 A,
VGE =
±15 V,
di/dt = 4200 A/s
Lσ = 150 nH
inductive load,
switch:
5SNA 0650J450300
Tvj = 125 °C
1610
mJ
Module stray inductance
Lσ AC
per diode
36
nH
TC = 25 °C
0.2
Resistance, terminal-chip
RAA’+CC’
per diode
TC = 125 °C
0.3
m
2) Characteristic values according to IEC 60747 – 2
3) Forward voltage is given at chip level
Thermal properties 4)
Parameter
Symbol
Conditions
min
typ
max
Unit
Diode thermal resistance
junction to case
Rth(j-c)DIODE
0.030 K/W
Diode thermal resistance 5)
case to heatsink
Rth(c-s)DIODE diode per switch,
λ grease = 1W/m x K
0.027
K/W
Mechanical properties 4)
Parameter
Symbol
Conditions
min
typ
max
Unit
Dimensions
L x W x H Typical , see outline drawing
130 x 140 x 48
mm
Term. to base:
40
Clearance distance in air
da
according to IEC 60664-1
and EN 50124-1
Term. to term:
26
mm
Term. to base:
64
Surface creepage distance
ds
according to IEC 60664-1
and EN 50124-1
Term. to term:
56
mm
Comparative tracking index
CTI
≥ 600
Ms
Base-heatsink, M6 screws
4
6
Mounting torques 5)
Mt1
Main terminals, M8 screws
8
10
Nm
Mass
m
1150
g
4) Thermal and mechanical properties according to IEC 60747 – 15
5) For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 5SLF20H2500 | 2000 A, 2500 V, SILICON, RECTIFIER DIODE |
| 5SLF20H2501 | 2000 A, 2500 V, SILICON, RECTIFIER DIODE |
| 5SLX12E1200 | 50 A, 1200 V, SILICON, RECTIFIER DIODE |
| 5SLX12F1200 | 75 A, 1200 V, SILICON, RECTIFIER DIODE |
| 5SLX12G1700 | 75 A, 1700 V, SILICON, RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 5SLX12K1711 | 制造商:ABB 制造商全稱:ABB 功能描述:Fast-Diode Die |
| 5SLX12L2510 | 制造商:ABB 制造商全稱:ABB 功能描述:Fast-Diode Die |
| 5SLX12M1711 | 制造商:ABB 制造商全稱:ABB 功能描述:Fast-Diode Die |
| 5SLX12M3301 | 制造商:ABB 制造商全稱:ABB 功能描述:Fast-Diode Die |
| 5SLX12M6500 | 制造商:ABB 制造商全稱:ABB 功能描述:Fast-Diode Die |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。