參數(shù)資料
型號: 5SLF20H2500
廠商: ABB SWITZERLAND LTD SEMICONDUCTORS
元件分類: 整流器
英文描述: 2000 A, 2500 V, SILICON, RECTIFIER DIODE
封裝: H2, STAKPAK-5
文件頁數(shù): 2/5頁
文件大?。?/td> 350K
代理商: 5SLF20H2500
5SLF 20H2500
Diode Characteristic Values3)
Parameter
Symbol
Conditions
min
typ
max
Unit
Repetitive peak reverse
current
IRRM
VR = VRRM
Tvj = 125°C
54
mA
Tvj = 25°C
1.95
2.20
V
Forward voltage
VF
IF = 2000 A
Tvj = 125°C
1.90
2.20
V
Peak forward recovery
voltage
VFR
dI/dt = 3000 A/s
Tvj = 125°C
60
V
Tvj = 25°C
1100
A
Reverse recovery current
Irr
Tvj = 125°C
1600
A
Tvj = 25°C
1000
C
Reverse recovery charge
Qrr
Tvj = 125°C
1900
C
Tvj = 25°C
1.7
s
Reverse recovery time
trr
Tvj = 125°C
1.8
s
Tvj = 25°C
0.9
J
Reverse recovery energy
Erec
VCC = 1250 V,
IF = 2000 A,
dI/dt = 3000 A/s,
Lσ = 200 nH
inductive load
Tvj = 125°C
1.7
J
3)Characteristic values according to IEC 60747-2
Thermal Properties
Parameter
Symbol
Conditions
min
typ
max
Unit
Thermal resistance junction
to case
Rth(j-c)
11
K/kW
Thermal resistance case to
heatsink
Rth(c-h)
2
K/kW
Operating junction
temperature
Tvjop
Heatsink flatness :
Complete module area < 100 m
Each submodule area < 50 m
Roughness : < 6.3 m
5
125
°C
Mechanical Properties
Parameter
Symbol
Conditions
min
typ
max
Unit
Dimensions
L* W* H
Typical , see outline drawing
236*150*26
mm
Clearance distance
DC
acc. IEC 60664-1 and EN50124-1
10
mm
Surface creepage distance
DSC
acc. IEC 60664-1 and EN50124-1
23
mm
Weight
1.7
kg
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1584-02 May. 04
page 2 of 5
相關(guān)PDF資料
PDF描述
5SLF20H2501 2000 A, 2500 V, SILICON, RECTIFIER DIODE
5SLX12E1200 50 A, 1200 V, SILICON, RECTIFIER DIODE
5SLX12F1200 75 A, 1200 V, SILICON, RECTIFIER DIODE
5SLX12G1700 75 A, 1700 V, SILICON, RECTIFIER DIODE
5SLX12G1701 75 A, 1700 V, SILICON, RECTIFIER DIODE
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