參數(shù)資料
型號: 6HN04MH
廠商: Sanyo Electric Co.,Ltd.
英文描述: N-Channel Silicon MOSFET General-Purpose Switching Device
中文描述: N溝道MOSFET的硅通用開關(guān)設(shè)備
文件頁數(shù): 3/4頁
文件大?。?/td> 48K
代理商: 6HN04MH
6HN04MH
No. A0365-3/4
0
0
20
40
Ambient Temperature, Ta --
°
C
0.1
0.2
0.3
0.4
0.5
0.7
0.6
60
80
100
120
140
160
IT11273
PD -- Ta
A
Mounedonaceamcboad(900mm
2
08mm
VGS -- Qg
SW Time -- ID
Ciss, Coss, Crss -- VDS
y
fs
-- ID
IS -- VSD
Drain Current, ID -- A
S
Drain Current, ID -- mA
F
y
f
Diode Forward Voltage, VSD -- V
S
Drain-to-Source Voltage, VDS -- V
A S O
C
Total Gate Charge, Qg -- nC
G
Drain-to-Source Voltage, VDS -- V
D
IT11272
0
0.2
0.6
1.0
0.4
0.8
2.0
1.4
1.2
1.6
1.8
0
1
2
6
4
3
7
8
9
5
10
IT11271
7
5
0.01
7
100
10
5
3
2
3
2
IT11269
IT11267
0.1
2
3
5
2
7
1.0
3
5
7
0
5
10
15
20
10
5
3
7
3
2
7
5
2
IT11270
IT11268
0.4
0.5
0.6
0.7
0.9
0.8
1.0
1.1
1.0
10
7
5
3
2
2
100
7
5
3
2
2
3
5
7
2
0.01
3
5
7
2
0.1
0.001
2
2 3
5 70.1
2
3
5 71.0
2
3
5 710
3
5 7100
0.01
VGS=0V
-5
°
C
2
°
C
T=5
°
C
td(on)
td(off)
tf
tr
VDD=30V
VGS=10V
Ciss
Coss
Crss
VDS=30V
ID=200mA
10
μ
s
10
μ
s
IDP=800mA
ID=200mA
Operation in this
area is limited by RDS(on).
100m
10m
DCoprton(T=25
°
C
1.0
0.01
10
2
3
5
7
2
100
3
5
7
2
1000
3
5
7
0.1
7
5
3
2
7
5
3
2
VDS=10V
75
°
C
T=-25
°
C
25
°
C
1000
7
5
3
f=1MHz
3
5
7
2
1.0
Ta=25
°
C
Single pulse
Mounted on a ceramic board (900mm
2
0.8mm)
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參數(shù)描述
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