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參數(shù)資料
| 型號(hào)： | 6HP04MH |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | P-Channel Silicon MOSFET General-Purpose Switching Device |
| 中文描述： | P溝道MOSFET的硅通用開關(guān)設(shè)備 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 6HP04MH |
6HP04MH
No. A0368-1/4
70306 / 51506PE MS IM TB-00002267
6HP04MH
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
4V drive.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
Ratings
Unit
V
V
mA
mA
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
--60
±
20
--120
--480
0.6
150
PW
≤
10
μ
s, duty cycle
≤
1%
Mounted on a ceramic board (900mm
2
0.8mm)
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=--1mA, VGS=0V
VDS=--60V, VGS=0V
VGS=
±
16V, VDS=0V
VDS=--10V, ID=--100
μ
A
VDS=--10V, ID=--60mA
ID=--60mA, VGS=--10V
ID=--30mA, VGS=--4V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
--60
V
μ
A
μ
A
V
mS
pF
pF
pF
ns
ns
ns
ns
--1
±
10
--2.6
--1.2
100
180
5.1
6.8
13.5
3.4
1.3
36.5
38.0
455
160
Static Drain-to-Source On-State Resistance
6.6
9.6
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : QB
Continued on next page.
Ordering number : ENA0368
SANYO Semiconductors
DATA SHEET
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
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| 6LN04MH | N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 6LP04MH | P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 6MBI100F-060 | IGBT MODULE |
| 6MI100F-060 | IGBT MODULE |
| 6MBI100L-060 | IGBT MODULE(L series) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 6HP04MH-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape |
| 6HP04MH-TL-W | 功能描述:MOSFET P-CH 60V .37A 制造商:on semiconductor 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 FET 類型:MOSFET P 通道，金屬氧化物 FET 功能:邏輯電平柵極，4V 驅(qū)動(dòng) 漏源極電壓（Vdss）:60V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:370mA（Ta） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:4.2 歐姆 @ 190mA，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:- 不同 Vgs 時(shí)的柵極電荷（Qg）:0.84nC @ 10V 不同 Vds 時(shí)的輸入電容（Ciss）:24.1pF @ 20V 功率 - 最大值:600mW 工作溫度:150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:3-SMD，扁平引線 供應(yīng)商器件封裝:SC-70FL/MCPH3 標(biāo)準(zhǔn)包裝:3,000 |
| 6HP04S | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 6HP04SS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 6HP04SS-TL-H | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape |
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