參數(shù)資料
型號(hào)： 6MBI50S-120
廠商： FUJI ELECTRIC CO LTD
元件分類： IGBT 晶體管
英文描述： IGBT(1200V/50A)
中文描述： 75 A, 1200 V, N-CHANNEL IGBT
封裝： MODULE-17
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 119K
代理商： 6MBI50S-120
6MBI50UA-120
IGBT Module U-Series
1200V / 50A 6 in one-package
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Industrial machines, such as Welding machines
Features
· High speed switching
· Voltage drive
· Low inductance module structure
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector current
Symbols
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip*4
Resistance
B value
I
CES
I
GES
V
GE(th)
V
CE(sat)
(terminal)
V
CE(sat)
(chip)
C
ies
t
on
t
r
t
r(i)
t
off
t
f
V
F
(terminal)
V
F
(chip)
t
rr
R lead
R
B
–
–
4.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
6.5
2.00
2.25
1.75
2.00
6
0.36
0.21
0.03
0.37
0.07
1.85
1.95
1.60
1.70
–
4.1
1.0
200
8.5
2.35
–
2.10
–
–
1.20
0.60
–
1.00
0.30
2.15
–
1.90
–
0.35
–
–
5000
495
3375
465
3305
520
3450
V
GE
=0V, V
CE
=1200V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=50mA
V
GE
=15V, I
C
=50A
V
CE
=10V, V
GE
=0V, f=1MHz
V
CC
=600V
I
C
=50A
V
GE
=±15V
R
G
=22
V
GE
=0V
I
F
=50A
I
F
=50A
T=25°C
T=100°C
T=25/50°C
mA
nA
V
V
nF
μs
V
μs
m
Κ
Electrical characteristics (at Tj=25°C unless otherwise specified)
Thermal resistance characteristics
Items Symbols
Thermal resistance
Contact Thermal resistance
–
–
–
–
–
0.05
0.45
0.73
–
IGBT
FWD
With thermal compound
°C/W
°C/W
°C/W
*
1 :
All terminals should be connected together when isolation test will be done.
*
2 :
Two thermistor terminals should be connected together, each other terminals should be connected together and shorted
to base plate when isolation test will be done.
*
3
:Recommendable value : 2.5 to 3.5 N·m(M5)
Conditions
Characteristics Unit
Min.
Typ.
Max.
Rth(j-c)
Rth(j-c)
Rth(c-f)*
5
*
5
:
This is the value which is defined mounting on the additional cooling fin with thermal compound.
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
*
4
:Biggest internal terminal resistance among arm.
Conditions
Characteristics Unit
Min.
Typ.
Max.
Symbol
V
CES
V
GES
I
C
I
C
p
-I
C
-I
C
pulse
P
C
T
j
T
stg
V
iso
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation voltage
between terminal and copper base *1
between thermistor and others *2
Screw Torque Mounting *3
-
Rating
1200
±20
75
50
150
100
50
100
275
+150
-40 to +125
2500
3.5
Unit
V
V
A
W
°C
VAC
N·m
Conditions
Continuous
1ms
1 device
AC:1min.
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
· Uninterruptible power supply
I
T
相關(guān)PDF資料
PDF描述
6MBI75U4B-120 13IGBT MODULE
6MBI75UB-120 IGBT Module
6MBI75F-060 IGBT(600V 75A)
6MBI75L-060 IGBT(600V/75A)
6MBI75S-120 IGBT(1200V/75A)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
6MBI50S-120-50 制造商:Fuji Electric 功能描述:6-PACK IGBT MODULE 50A 1200V NPT 制造商:Fuji Electric 功能描述:6-PACK IGBT, MODULE, 50A, 1200V NPT 制造商:Fuji Electric 功能描述:6-PACK IGBT, MODULE, 50A, 1200V NPT; Transistor Type:IGBT Module; DC Collector Current:75A; Collector Emitter Voltage Vces:2.65V; Power Dissipation Pd:360W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:17 ;RoHS Compliant: Yes
6MBI50S-120L 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT(1200V/6x50A)
6MBI50S-140 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE
6MBI50S-140_01 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE
6MBI50U4A-120 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*